This work is focused on the structural and morphological investigations of polyaniline and poly(o-anisidine) polymers generated in a direct current glow discharge plasma, in the vapors of the monomers, without a buffer gas, using an oblique angle-positioned substrate configuration. By atomic force microscopy and scanning electron microscopy we identified the formation of worm-like interlinked structures on the surface of the polyaniline layers, the layers being compact in the bulk. The poly(o-anisidine) layers are flat with no kind of structures on their surfaces. By Fourier transform infrared spectroscopy we identified the main IR bands characteristic of polyaniline and poly(o-anisidine), confirming that the polyaniline chemical structure is in the emeraldine form. The IR band from 1070 cm⁻¹ was attributed to the emeraldine salt form of polyaniline as an indication of its doping with H⁺. The appearance of the IR band at 1155 cm⁻¹ also indicates the conducting protonated of polyaniline. The X-ray diffraction revealed the formation of crystalline domains embedded in an amorphous matrix within the polyaniline layers. The interchain separation length of 3.59 Å is also an indicator of the conductive character of the polymers. The X-ray diffraction pattern of poly(o-anisidine) highlights the semi-crystalline nature of the layers. The electrical conductivities of polyaniline and poly(o-anisidine) layers and their dependence with temperature are also investigated.

Copper/Cobalt/Copper/Iron thin films were synthesized in order to obtain nanostructured materials with special magnetoresistive properties. The multilayer films were deposited on silicon substrates. In this respect we used Thermionic Vacuum Arc Discharge Method (TVA). The benefit of this deposition technique is the ability to have a controlled range of thicknesses starting from few nanometers to hundreds of nanometers. The purity of the thin films was insured by a high vacuum pressure and a lack of any kind of buffer gas inside the coating chamber. The morphology and structure of the thin films were analyzed using Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) Techniques and Energy Dispersive X-ray Spectroscopy (EDXS). Magnetoresistive measurement results depict that thin films possess Giant Magneto-Resistance Effect (GMR). Magneto-Optic-Kerr Effect (MOKE) studies were performed to characterize the magnetic properties of these thin films.

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.