Chemical–mechanical polishing (CMP) is widely adopted as a key bridge between fine rotation grinding and ion beam figuring in super-smooth monocrystalline silicon mirror manufacturing. However, controlling mid- to short-spatial-period errors during CMP is a challenge owing to the complex chemical–mechanical material removal process during surface morphology formation. In this study, the nature of chemical and mechanical material removal during CMP is theoretically studied based on a three-system elastic–plastic model and wet chemical etching behavior. The effect of the applied load, material properties, abrasive size distribution, and chemical reaction rate on the polishing surface morphology is evaluated. A microscale material removal model is established to numerically predict the silicon surface morphology and to explain the surface roughness evolution and the source of nanoscale intrinsic polishing scratches. The simulated surface morphology is consistent with the experimental results obtained by using the same polishing parameters tested by employing profilometry and atomic force microscopy. The PSD curve for both simulated surface and experimental results by profilometry and atomic force microscopy follows linear relation with double-logarithmic coordinates. This model can be used to adjust the polishing parameters for surface quality optimization, which facilitates CMP manufacturing.

In this work, a masking technique was used to improve the thickness uniformity of a Mo/Si multilayer deposited on a curved spherical mirror by direct current (DC) magnetron sputtering with planetary rotation stages. The clear aperture of the mirror was 125 mm with a radius of curvature equal to 143.82 mm. Two different shadow masks were prepared; one was flat and the other was oblique. When using the flat mask, the non-uniformity considerably increased owing to the relatively large gap between the mask and substrate. The deviation between the designed and measured layer thickness and non-uniformity gradually reduced with a smaller gap. The second mask was designed with an oblique profile. Using the oblique mask, the deviation from multilayer thickness uniformity was substantially reduced to a magnitude below 0.8% on the curved spherical substrate over the clear aperture of 125 mm. Multilayers still achieved a smooth growth when deposited with obliquely incident particles. The facile masking technique proposed in this study can be used for depositing uniform coatings on curved spherical substrates with large numerical apertures for high-resolution microscopes, telescopes, and other related optical systems.