Transition metal dichalcogenides are relevant for electronic devices owing to their sizable band gaps and absence of dangling bonds on their surfaces. For device development, a controllable method for doping these materials is essential. In this paper, we demonstrate an electrostatic gating method using a solid polymer electrolyte, poly(ethylene oxide) and CsClO₄, on exfoliated, multilayer 2H-MoTe₂. The electrolyte enables the device to be efficiently reconfigured between n- and p-channel operation with ON/OFF ratios of approximately 5 decades. Sheet carrier densities as high as 1.6 × 10¹³ cm^–2 can be achieved because of a large electric double layer capacitance (measured as 4 μF/cm²). Further, we show that an in-plane electric field can be used to establish a cation/anion transition region between source and drain, forming a p–n junction in the 2H-MoTe₂ channel. This junction is locked in place by decreasing the temperature of the device below the glass transition temperature of the electrolyte. The ideality factor of the p–n junction is 2.3, suggesting that the junction is recombination dominated.