Near‐infrared organic photodetectors (NIR OPDs) comprising ultra‐narrow bandgap non‐fullerene acceptors (NFA, over 1000 nm) typically exhibit high dark current density under applied reverse bias. Therefore, suppression of dark current density is crucial to achieve high‐performance of such NIR OPDs. Herein, cyano (CN) with a strong electron‐withdrawing property is introduced into alkoxy thiophene as a π‐bridge to adjust its optoelectronic characteristics, and the correlation between dark current density and charge injection barrier is investigated. Compared with their motivated NFA (COTH), the novel CN‐substituted NFAs, COTCN and COTCN2, exhibited deeper‐lying highest occupied molecular orbital energy levels and narrower optical bandgap (<1.10 eV), owing to the strong inductive and resonance effect of CN. The dark current and total noise currents are minimized as the number of substituted CN increases because of the larger hole injection barrier. Consequently, PTB7‐Th:COTCN2 exhibited the best shot‐noise limited detectivity (D^*_sh, 1.18 × 10¹² Jones) and total noise detectivity (D^*_n, 1.33 × 10¹¹ Jones) compared with those of PTB7‐Th:COTH (D^*_sh, 2.47 × 10¹¹ Jones and D^*_n, 1.96 × 10¹⁰ Jones).

III‐V quantum dots (QDs) have emerged as significant alternatives to Cd‐ and Pb‐based QDs, garnering notable attention over the past two decades. However, the understanding of III‐V QDs, particularly in the short wave‐infrared (SWIR) region, remains limited. InAs QDs are widely recognized as the most prominent SWIR QDs, but their absorption beyond 1400 nm presents various challenges. Consequently, InSb QDs with relatively narrower bandgaps have been investigated; however, research on their device applications is lacking. In this study, InSb QDs are synthesized with absorption ranging from 1000 to 1700 nm by introducing Cl⁻ ions to enhance QD surface stability during synthesis. Additionally, it coated InAs and ZnSe shells onto the InSb QDs to validate photoluminescence in the SWIR region and improve photostability. Subsequently, these QDs are employed in the fabrication of photodetector devices, resulting in photodetection above 1500 nm using Pb‐free QDs. The photodetection device exhibited an external quantum efficiency (EQE) of 11.4% at 1370 nm and 6.3% at 1520 nm for InSb core QDs, and 4.6% at 1520 nm for InSb/InAs core/shell QDs, marking the successful implementation of such a device. In detail, the 1520 nm for InSb core device showed a dark current density(J_D) value of: 1.46 × 10⁻⁹ A/cm², responsivity(R): 0.078 A/W, and specific detectivity based on the shot noise(D_sh*): 3.6 × 10¹² Jones at 0 V.

The dissemination of sensors is key to realizing a sustainable, ‘intelligent’ world, where everyday objects and environments are equipped with sensing capabilities to advance the sustainability and quality of our lives—e.g. via smart homes, smart cities, smart healthcare, smart logistics, Industry 4.0, and precision agriculture. The realization of the full potential of these applications critically depends on the availability of easy-to-make, low-cost sensor technologies. Sensors based on printable electronic materials offer the ideal platform: they can be fabricated through simple methods (e.g. printing and coating) and are compatible with high-throughput roll-to-roll processing. Moreover, printable electronic materials often allow the fabrication of sensors on flexible/stretchable/biodegradable substrates, thereby enabling the deployment of sensors in unconventional settings. Fulfilling the promise of printable electronic materials for sensing will require materials and device innovations to enhance their ability to transduce external stimuli—light, ionizing radiation, pressure, strain, force, temperature, gas, vapours, humidity, and other chemical and biological analytes. This Roadmap brings together the viewpoints of experts in various printable sensing materials—and devices thereof—to provide insights into the status and outlook of the field. Alongside recent materials and device innovations, the roadmap discusses the key outstanding challenges pertaining to each printable sensing technology. Finally, the Roadmap points to promising directions to overcome these challenges and thus enable ubiquitous sensing for a sustainable, ‘intelligent’ world.

All-organic coaxial nanocables with high electrical conductivity and luminescence properties were fabricated by controlled solution blending of poly(3-hexylthiophene) (P3HT) and 1-cyano-trans-1,2-bis-(3′,5′-bis-trifluoromethyl-biphenyl)ethylene (CN-TFMBE). The coaxial nanocables with interfacial charge-transfer doping layers showed a very high electrical conductivity, a chemical-gating feature of the threshold voltage, and efficient light emission.