In this letter, we reported a high-$k$ gadolinium oxide $\left({\mathrm{Gd}}_2{\mathrm{O}}_3\right)$ gate dielectric formed by reactive rf sputtering. It is found that the ${\mathrm{Gd}}_2{\mathrm{O}}_3$ gate dielectric film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis and frequency dispersion in $C\text{‐}V$ curves comparable to that of ${\mathrm{HfO}}_2$ film. This indicates that postprocessing treatments can reduce a large amount of interface trap and can passivate a large amount of trapped charge at defect sites.

The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications.

The total ionizing dose (TID) effects of ⁶⁰Co γ ray radiation on the resistive random access memory (RRAM) devices with the structure of Ag/AlO _x /Pt were studied. The resistance in low resistance state (LRS), set voltage, and reset voltage are almost immune to radiation, whereas the initial resistance, resistance at high resistance state (HRS), and forming voltage were significantly impacted after radiation due to the radiation-induced holes. A novel hybrid filament model is proposed to explain the radiation effects, presuming that holes are co-operated with Ag ions to build filaments. In addition, the thermal coefficients of the resistivity in LRS can support this hybrid filament model. The Ag/AlO _x /Pt RRAM devices exhibit radiation immunity to a TID up to 1 Mrad(Si) and are highly suitable for radiation-hard electronics applications.