It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.

From the wide range of engineering materials traditional Stellite 6 (cobalt alloy) exhibits excellent resistance to cavitation erosion (CE). Nonetheless, the influence of ion implantation of cobalt alloys on the CE behaviour has not been completely clarified by the literature. Thus, this work investigates the effect of nitrogen ion implantation (NII) of HIPed Stellite 6 on the improvement of resistance to CE. Finally, the cobalt-rich matrix phase transformations due to both NII and cavitation load were studied. The CE resistance of stellites ion-implanted by 120 keV N⁺ ions two fluences: 5 × 10¹⁶ cm⁻² and 1 × 10¹⁷ cm⁻² were comparatively analysed with the unimplanted stellite and AISI 304 stainless steel. CE tests were conducted according to ASTM G32 with stationary specimen method. Erosion rate curves and mean depth of erosion confirm that the nitrogen-implanted HIPed Stellite 6 two times exceeds the resistance to CE than unimplanted stellite, and has almost ten times higher CE reference than stainless steel. The X-ray diffraction (XRD) confirms that NII of HIPed Stellite 6 favours transformation of the ε(hcp) to γ(fcc) structure. Unimplanted stellite ε-rich matrix is less prone to plastic deformation than γ and consequently, increase of γ phase effectively holds carbides in cobalt matrix and prevents Cr₇C₃ debonding. This phenomenon elongates three times the CE incubation stage, slows erosion rate and mitigates the material loss. Metastable γ structure formed by ion implantation consumes the cavitation load for work-hardening and γ → ε martensitic transformation. In further CE stages, phases transform as for unimplanted alloy namely, the cavitation-inducted recovery process, removal of strain, dislocations resulting in increase of γ phase. The CE mechanism was investigated using a surface profilometer, atomic force microscopy, SEM-EDS and XRD. HIPed Stellite 6 wear behaviour relies on the plastic deformation of cobalt matrix, starting at Cr₇C₃/matrix interfaces. Once the Cr₇C₃ particles lose from the matrix restrain, they debond from matrix and are removed from the material. Carbides detachment creates cavitation pits which initiate cracks propagation through cobalt matrix, that leads to loss of matrix phase and as a result the CE proceeds with a detachment of massive chunk of materials.

$\mathrm{Ge}$ with a quasi-direct band gap can be realized by strain engineering, alloying with $\mathrm{Sn}$, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap $\mathrm{Ge}\text{−}\mathrm{Sn}$ alloys. The heavily doped n-type $\mathrm{Ge}\text{−}\mathrm{Sn}$ is realized with CMOS-compatible nonequilibrium material processing. $\mathrm{P}$ is used to form highly doped n-type $\mathrm{Ge}\text{−}\mathrm{Sn}$ layers and to modify the lattice parameter of $\mathrm{P}$-doped $\mathrm{Ge}\text{−}\mathrm{Sn}$ alloys. The strain engineering in heavily-$\mathrm{P}$-doped $\mathrm{Ge}\text{−}\mathrm{Sn}$ films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in $\mathrm{P}$-doped $\mathrm{Ge}\text{−}\mathrm{Sn}$ alloy as a function of $\mathrm{P}$ concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1 × 10 cm the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that $\mathrm{Ge}$-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.

The last missing piece of the puzzle for the full functionalization of group IV optoelectronic devices is a direct bandgap semiconductor made by CMOS compatible technology. Here, we report on the fabrication of GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy. The n-type single crystalline GeSn alloys are realized by co-implantation of Sn and P into Ge. Both the activation of P and the formation of GeSn are performed during a single-step flash lamp annealing for 3 ms. The bandgap engineering in GeSn as a function of the doping level and Sn concentration is theoretically predicted by density functional theory and experimentally verified using ellipsometric spectroscopy. We demonstrate that both the diffusion and the segregation of Sn and P atoms in Ge are fully suppressed by millisecond-range nonequilibrium thermal processing.