Yiyi Yan

Ms. Yiyi Yan

Université Catholique de Louvain, Louvain-la-Neuve, Wallonia, Belgium
orcid

Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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19 February 2021 in Sensors
Verified
Journal Article
Open access
PDF file
XTXiaohui Tang
Xiaohui Tang
MDMarc Debliquy
Marc Debliquy
Lahem DrissLahem Driss
Lahem Driss
YYYiyi Yan
Yiyi Yan
JRJean-Pierre Raskin
Jean-Pierre Raskin
Since the first graphene gas sensor has been reported, functionalized graphene gas sensors have already attracted a lot of research interest due to their potential for high sensitivity, great selectivity, and fast detection of various gases. In this paper, we summarize the recent development and progression of functionalized graphene sensors for ammonia (NH3) detection at room temperature. We review graphene gas sensors functionalized by different materials, including metallic nanoparticles, metal oxides, organic molecules, and conducting polymers. The various sensing mechanism of functionalized graphene gas sensors are explained and compared. Meanwhile, some existing challenges that may hinder the sensor mass production are discussed and several related solutions are proposed. Possible opportunities and perspective applications of the graphene NH3 sensors are also presented.

9 February 2023 in IEEE Electron Device Letters
Verified
Journal Article
Closed access
MNMassinissa Nabet
Massinissa Nabet
MRMartin Rack
Martin Rack
YYYiyi Yan
Yiyi Yan
BNBich-Yen Nguyen
Bich-Yen Nguyen
JRJean-Pierre Raskin
Jean-Pierre Raskin
Measurements of a new type of substrate for the integration of the trap-rich interface passivation solution with the below-buried oxide functionalities required in fully-depleted (FD) Silicon-on-Insulator (SOI) nodes is presented. This is achieved by adding a second thin buried oxide (BOX2) layer in between the substrate and the trap-rich/BOX1/SOI stack. It is shown that the trap-rich layer above BOX2 can effectively passivate the parasitic surface conduction that would be induced below BOX2 if BOX2 remains thinner than 20 nm. This is proven through measurements of substrate losses and non-linearity of coplanar waveguide transmission lines, comparing the fabricated double-BOX samples to reference trap-rich and unpassivated high-resistivity substrates.

9 November 2022 in Chemosensors
Verified
Journal Article
Open access
PDF file
XTXiaohui Tang
Xiaohui Tang
JRJean-Pierre Raskin
Jean-Pierre Raskin
NRNicolas Reckinger
Nicolas Reckinger
YYYiyi Yan
Yiyi Yan
Nicolas AndréNicolas André
Nicolas André
MDMarc Debliquy
Marc Debliquy
This work introduces a new measurement methodology for enhancing gas detection by tuning the magnitude and polarity of back-gate voltage of a field-effect transistor (FET)-based sensor. The aim is to simultaneously strengthen the sensor response and accelerate the sensor recovery. In addition, this methodology can consume less energy compared with conventional measurements by direct current bias. To illustrate the benefits of the proposed methodology, we fabricated and characterized a polypyrrole/graphene (PPy/G) FET sensor for ammonia (NH3) detection. Our experiment, simulation and calculation results demonstrated that the redox reaction between the NH3 molecules and the PPy/G sensitive layer could be controlled by altering the polarity and the magnitude of the back-gate voltage. This proof-of-principle measurement methodology, which solves the inherent contradiction between high response and slow recovery of the chemiresistive sensor, could be extended to detect other gases, so as to improve global gas measurement systems. It opens up a new route for FET-based gas sensors in practical applications.

22 April 2022 in Solid-State Electronics
Verified
Journal Article
Closed access
YYYiyi Yan
Yiyi Yan
VKValeriya Kilchytska
Valeriya Kilchytska
DFDenis Flandre
Denis Flandre
JRJean-Pierre Raskin
Jean-Pierre Raskin

8 January 2021 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
BWBin Wang
Bin Wang
MMMohammad Wasil Malik
Mohammad Wasil Malik
YYYiyi Yan
Yiyi Yan
VKValeriya Kilchytska
Valeriya Kilchytska
YZYun Zeng
Yun Zeng
JRJean-Pierre Raskin
Jean-Pierre Raskin
The effect of device fabrication processing conditions is often overlooked in the evaluation of the contact resistance in metal–graphene contact. In this work, we investigate the Ti–graphene contact resistance theoretically and experimentally. A compact model has been proposed to reveal and evaluate the role of different factors in controlling the value of contact resistance. A layer of oxidized Ti or polymer residues at the Ti–graphene interface has been considered to explain the reduced carrier transmission probability through the interface. Experimental results report a low contact resistance as small as 271.45 $\Omega ~\cdot \mu \text{m}$ and our model agrees with the measured values. The proposed model explains the large variation of the contact resistance reported in the literature up to date and help to improve metal–graphene contact for future applications.

1 June 2023 in Solid-State Electronics
Verified
Journal Article
Closed access
YYYiyi Yan
Yiyi Yan
VKValeriya Kilchytska
Valeriya Kilchytska
DFDenis Flandre
Denis Flandre
JRJean-Pierre Raskin
Jean-Pierre Raskin