For field electron emission (FE), an empirical equation for measured current I _m as a function of measured voltage V _m has the form I _m = CV _m ^k exp[– B / V _m ], where B is a constant and C and k are constants or vary weakly with V _m . Values for k can be extracted (i) from simulations based on some specific FE theory, and in principle (ii) from current–voltage measurements of sufficiently high quality. This paper shows that a comparison of theoretically derived and experimentally derived k- values could provide a sensitive and useful tool for comparing FE theory and experiment, and for choosing between alternative theories. Existing methods of extracting k -values from experimental or simulated current–voltage data are discussed, including a modernized ‘least residual’ method, and existing knowledge concerning k -values is summarized. Exploratory simulations are reported. Where an analytical result for k is independently known, this value is reliably extracted. More generally, extracted k -values are sensitive to details of the emission theory used, but also depend on assumed emitter shape; these two influences will need to be disentangled by future research, and a range of emitter shapes will need examination. Other procedural conclusions are reported. Some scientific issues that this new tool may eventually be able to help investigate are indicated.

Theoretical analysis of field electron emission must consider many parameters, one of the most critical being the field enhancement factor (FEF). In a single tip form, the FEF can vary several orders of magnitude and depends only on the system geometry, when the gap length between the emitter and counter-electrode is much greater than the height of the emitter. In this work, we determine very accurate analytical expressions for the FEF of five emitters with various shapes, which are often considered in the literature: Ellipsoidal, Hemisphere-on-Cylindrical post, Hemisphere-on-Orthogonal cone, Paraboloidal, and Hyperboloidal. We map the FEF as a function of the aspect ratio with an error smaller than 2% to serve as a quick reference database. Additionally, we calculate the electric field distribution over the emitters, which can give an insight into the effective notional emission area and the influence of the emitter’s base.

Local emission characteristics of microscopic emission sites on the surface of large-area field emitters are among the most important factors influencing macroscopic emission properties. This work aimed to evaluate the local field emission characteristics using a computerized field emission projector and a technique involving multichannel recording of current–voltage characteristics. The model field emitter consisted of nanocomposite multiwall carbon nanotubes in a polymer matrix.

An experimental apparatus and a LabView-based software suite were developed to conduct real-time research on field electron emission. The authors observed and analyzed the current–voltage characteristics of emitters based on carbon nanotube/polystyrene nanocomposites. A simple quantitative test was used to compare such characteristics with the classical field electron emission theory.

Nanostructured multitip surfaces have sufficient potential to obtain the high emission currents necessary to develop stable and noninertial sources of free electrons with increased levels of permissible currents. The key to understanding the processes of formation and stability of macroscopic emission currents from these large area field emitters (LAFEs) is assessing the local characteristics of individual emission sites. Herein, a method for determining the local emission characteristics of nanoscale emission sites is developed via processing the glow pattern data and a system for rapidly recording the current–voltage characteristics of LAFEs.

This article presents, for the first time, a comparative analysis of the emission characteristics of large-area field-effect cathodes (LAFE) based on carbon nanotubes (CNTs) of various morphologies according to key parameters using a unique computerized technique. The work presents a description of a technology for creating various CNT arrays and their comprehensive structure characterization. All CNT arrays synthesized by the catalytic PECVD method on a silicon substrate showed a high degree of chemical purity under the presented technological conditions. In some cases, nanoisland films of Fe were used as a catalyst; in others, thin films of NiO were used, which were deposited on a silicon wafer by chemical vapor deposition (CVD) and atomic layer deposition (ALD), respectively. As a result of these studies, it turned out that an array with a thick CNT coating has good resistance to the action of strong electric fields, fairly good uniformity of distribution of emission centers, a fairly high selection current (2.88 mA/cm² at 4.53 V/μm), and compliance with the normal current mode according to the “orthodox” test, which makes the morphology of such structures the most promising for further technological optimization of CNT-based cathodes for various practical applications.