Tsunehiro Takeuchi

Tsunehiro Takeuchi

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Tsunehiro Takeuchi


Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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8 January 2019 in Nature Communications
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DBDogyun Byeon
Dogyun Byeon
RSRobert Sobota
Robert Sobota
KDKévin Delime-Codrin
Kévin Delime-Codrin
SCSeongho Choi
Seongho Choi
KHKeisuke Hirata
Keisuke Hirata
TTTsunehiro Takeuchi
Tsunehiro Takeuchi
Both electrical conductivity σ and Seebeck coefficient S are functions of carrier concentration being correlated with each other, and the value of power factor S2σ is generally limited to less than 0.01 W m−1 K−2. Here we report that, under the temperature gradient applied simultaneously to both parallel and perpendicular directions of measurement, a metallic copper selenide, Cu2Se, shows two sign reversals and colossal values of S exceeding ±2 mV K−1 in a narrow temperature range, 340 K < T < 400 K, where a structure phase transition takes place. The metallic behavior of σ possessing larger magnitude exceeding 600 S cm−1 leads to a colossal value of S2σ = 2.3 W m–1 K–2. The small thermal conductivity less than 2 W m−1 K−1 results in a huge dimensionless figure of merit exceeding 400. This unusual behavior is brought about by the self-tuning carrier concentration effect in the low-temperature phase assisted by the high-temperature phase.

1 December 2014 in Science and Technology of Advanced Materials
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TTTsunehiro Takeuchi
Tsunehiro Takeuchi
The bulk thermal rectifiers usable at a high temperature above 300 K were developed by making full use of the unusual electron thermal conductivity of icosahedral quasicrystals. The unusual electron thermal conductivity was caused by a synergy effect of quasiperiodicity and by a narrow pseudogap at the Fermi level. The rectification ratio, defined by TRR = [Formula: see text], reached vary large values exceeding 2.0. This significant thermal rectification would lead to new practical applications for the heat management.

30 May 2014 in Journal of Electronic Materials
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RNRyu-Suke Nakayama
Ryu-Suke Nakayama
TTTsunehiro Takeuchi
Tsunehiro Takeuchi

15 June 2016 in Journal of Electronic Materials
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SGSwapnil Ghodke
Swapnil Ghodke
NHNaoya Hiroishi
Naoya Hiroishi
AYAkio Yamamoto
Akio Yamamoto
HIHiroshi Ikuta
Hiroshi Ikuta
MMMasaharu Matsunami
Masaharu Matsunami
TTTsunehiro Takeuchi
Tsunehiro Takeuchi


16 November 2021 in Materials
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Giovanna LatronicoGiovanna Latronico
Giovanna Latronico
Saurabh SinghSaurabh Singh
Saurabh Singh
Paolo MelePaolo Mele
Paolo Mele
Abdalla M. DarwishAbdalla M. Darwish
Abdalla M. Darwish
SSSergey Sarkisov
Sergey Sarkisov
SWSimeon Wilson
Simeon Wilson
The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO2 thin film grown on silica, with a power factor (PF) of 211.8 μW/m·K2 at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K2) while thermal conductivity κ was reduced about four times.