This paper proposes a modulated voltage control strategy based on the predictive control approach. To accomplish this, a direct matrix converter topology is used in combination with a three-phase generation system. Results based on a MATLAB/Simulink simulation environment are discussed and the most relevant characteristics of the proposed modulated predictive control approach are highlighted considering the total harmonic distortion as a performance parameter and complying with the specifications of the standards for uninterruptible power supplies. The root-mean-square error is also displayed to show the quality of the system signal.

Bidirectional switches are highly required power electronics units for the design of power converters, especially for direct matrix converters. This article presents the design and implementation of a compact bidirectional switch based on SiC-MOSFET technology, aimed at high-efficiency, high-density power electronics applications. The proposed architecture employs surface-mount components, optimizing both the occupied area and electrical performance. The selected switching device is the IMBG120R053M2H from Infineon, a SiC-MOSFET known for its low on-resistance, high reverse-voltage blocking capability, and excellent switching speed. To drive the power devices, the UCC21521 gate driver integrates two independent isolated outputs in a single package, enabling precise control and reduced electromagnetic interference (EMI). The developed design supports bidirectional current conduction and voltage blocking, offering a robust and scalable solution for next-generation power converters. Design criteria, simulation results, and experimental validations are discussed.