Bidirectional switches are highly required power electronics units for the design of power converters, especially for direct matrix converters. This article presents the design and implementation of a compact bidirectional switch based on SiC-MOSFET technology, aimed at high-efficiency, high-density power electronics applications. The proposed architecture employs surface-mount components, optimizing both the occupied area and electrical performance. The selected switching device is the IMBG120R053M2H from Infineon, a SiC-MOSFET known for its low on-resistance, high reverse-voltage blocking capability, and excellent switching speed. To drive the power devices, the UCC21521 gate driver integrates two independent isolated outputs in a single package, enabling precise control and reduced electromagnetic interference (EMI). The developed design supports bidirectional current conduction and voltage blocking, offering a robust and scalable solution for next-generation power converters. Design criteria, simulation results, and experimental validations are discussed.

This work presents an alternating sequential model predictive control (ASMPC) scheme applied to multimodular matrix converters. The proposed strategy alternately evaluates two control objectives: load current tracking and input reactive power minimization. The algorithm was implemented in MATLAB/Simulink on an architecture composed of two direct matrix converters in a multimodular configuration. The influence of parameter $N_2$ on system performance was analyzed under step changes in reference current of 30 A and 60 A. To this end, performance metrics such as THD and MSE were used, along with a descriptive statistical analysis including the mean, standard deviation, mean absolute deviation (MAD), and coefficient of variation (CV). Simulation results show stable performance for variations in $N_2$, with an input current THD of $8.10\%$ and load THD reduced to $1.00\%$, demonstrating improved harmonic performance compared with classical weighted MPC approaches.