Organic photodetectors (OPDs) offer considerable promise for low-power, solution-processable biosensing and imaging applications; however, their performance remains limited by spectral mismatch and interfacial trap states. In this study, a highly sensitive polymer photodiode was developed via trace incorporation (0.8 wt%) of InP/ZnSe/ZnS quantum dots (QDs) into a PTB7-Th:PC₇₁BM bulk heterojunction (BHJ) matrix. This QD doping approach enhanced the external quantum efficiency (EQE) across the 540–660 nm range and suppressed the dark current density at −2 V by passivating interface trap states. Despite a slight decrease in optical absorption at the optimized composition, the internal quantum efficiency (IQE) increased significantly from ~80% to nearly 95% resulting in a net EQE improvement. This suggests that QD incorporation improved charge transport without compromising charge separation efficiency. As a result, the device achieved a specific detectivity (D*) of 1.8 × 10¹³ Jones, representing a 93% improvement over binary BHJs, along with an ultra-low dark current density of 7.76 × 10⁻¹⁰ A/cm². Excessive QD loading, however, led to optical losses and increased dark current, underscoring the need for precise compositional control. Furthermore, the enhanced detectivity led to a 4 dB improvement in the signal-to-noise ratio (SNR) of photoplethysmography (PPG) signals in the target wavelength range, enabling more reliable biophotonic sensing without increased power consumption. This work demonstrates that QD-based spectral and interfacial engineering offers an effective and scalable route for advancing the performance of OPDs, with broad applicability to low-power biosensors and high-resolution polymer–QD imaging systems.

Red color conversion materials have often been used in conventional white LEDs (light-emitting diodes) to enhance the insufficient deep red component and thus improve the color rendering property. Quantum dots (QDs) are one of the candidates due to their flexibility in controlling the emission wavelength, which is attributed to the quantum confinement effect. Two types of remote QD components, i.e., QD films and QD caps, were prepared and applied to conventional white LED illumination to improve the color rendering properties. Thanks to the red component near 630 nm caused by the QD components, the color rendering indices(CRIs) of both Ra and R9 could be increased to over 95. It was found that both the diffusing nature of the reflector and the light recycling process in the vertical cavity between the bottom reflector and the top optical films play important roles in improving the color conversion efficiency of remote QD components. The present study showed that the proper application of remote QDs combined with a suitable optical cavity can control the correlated color temperature of the illumination over a wide range, thus realizing different color appearances of white LED illumination. In addition, a high CRI of over 95 could be achieved due to sufficient excitation from fewer QDs due to the strong optical cavity effect.

The introduction of side-emitting lenses into white light-emitting diodes (LEDs) has enabled thin panel lighting technology based on LED technology, but also presents the disadvantage of low color rendering due to insufficient red components in the spectra of typical white LEDs. Additional application of remote quantum dot (QD) components such as QD films or caps presents the issues of increased numbers of components and higher costs. In this study, we incorporated red QDs directly into a lens placed on white LEDs and analyzed the effects of QD lenses on the optical characteristics of a lighting device through experiments and simulations. By incorporating red CdSe/ZnS QDs into UV-curable resin to fabricate QD lenses and applying them to white LEDs, we significantly improved the color rendering index and were able to adjust the correlated color temperature over a wide range between 2700 and 9900 K. However, as the concentration of QDs in the lens increased, scattering by the QD particles was enhanced, strengthening the Lambertian distribution in the intensity plot. Following the development of optical models for QD lenses under experimental conditions, comprehensive optical simulations of white LED lighting systems revealed that increasing the device height proved more effective than modifying TiO₂ scattering particle concentration in the diffuser plate for mitigating QD-induced bright spots and enhancing illumination uniformity.

Stretchable semiconductors capable of maintaining electrical performance under large mechanical deformation are essential for reliable wearable electronic devices. However, polymer semiconductors often suffer from electrical degradation when subjected to tensile strain. In this study, electrical stability under strain was achieved by using a rubber-blended poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)diketopyrrolo[3,4-c]pyrrole-1,4-dione-alt-thieno[3,2-b]thiophene) (DPPT-TT) polymer semiconductor based on a conjugated polymer/elastomer phase separation-induced elasticity (CONPHINE) structure. Unlike most previous studies on fully stretchable thin-film transistors (TFTs), which primarily report overall performance changes under mechanical strain, this work systematically identifies the dominant origin of electrical performance degradation through a stepwise electrical analysis encompassing the gate insulating layer, the semiconductor layer, and complete devices. Bottom-gate top-contact (BGTC) and bottom-gate bottom-contact (BGBC) devices were fabricated on rigid Si/SiO₂ substrates to examine the intrinsic properties of the DPPT-TT/styrene-ethylene-butylene-styrene (SEBS) CONPHINE film. As a result, the device exhibits 90% mobility retention even at 100% tensile strain applied parallel to the charge transport direction. Quantitative resistance analysis using the Y-function method reveals that variations in channel resistance play a dominant role in strain-induced performance degradation, whereas changes in contact resistance contribute only marginally. These findings demonstrate that stabilizing channel resistance, rather than contact resistance, is important for achieving high mobility retention under large mechanical deformation, thereby providing concrete and quantitative design guidelines for reliable stretchable TFTs.