Newly discovered altermagnets are magnetic materials exhibiting both compensated magnetic order, similar to antiferromagnets, and simultaneous non-relativistic spin-splitting of the bands, akin to ferromagnets. This characteristic arises from specific symmetry operation that connects the spin sublattices. In this report, we show with ab initio calculations that semiconductive MnSe exhibits altermagnetic spin-splitting in the wurtzite phase as well as a critical temperature well above room temperature. It is the first material from such a space group identified to possess altermagnetic properties. Furthermore, we demonstrate experimentally through structural characterization techniques that it is possible to obtain thin films of both the intriguing wurtzite phase of MnSe and more common rock-salt MnSe using molecular beam epitaxy on GaAs substrates. The choice of buffer layers plays a crucial role in determining the resulting phase and consequently extends the array of materials available for the physics of altermagnetism.

SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates.