Luan Gonçalves de Lima

Mr. Luan Gonçalves de Lima

Brno University of Technology, Brno, Jihomoravský Kraj, Czech Republic
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orcid

Research Focus & Metrics

Academic Career Length

5Years (2022-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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6 October 2022 in Nanomaterials
Verified
Journal Article
Open access
PDF file
William Chiappim JuniorWilliam Chiappim Junior
William Chiappim Junior
BNBenedito Donizeti Botan Neto
Benedito Donizeti Botan Neto
MMMichaela Shiotani Marcondes
Michaela Shiotani Marcondes
JKJúlia Karnopp
Júlia Karnopp
LLLuan Gonçalves de Lima
Luan Gonçalves de Lima
Rodrigo PessoaRodrigo Pessoa
Rodrigo Pessoa
The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques. In the past few years, the development and recent advances in atomic layer deposition (ALD) processes boosted interest in their use in advanced electronic and nano/microelectromechanical systems (NEMS/MEMS) device manufacturing. In this context, non-thermal plasma (NTP) technology has been highlighted because it allowed the ALD technique to expand its process window and the fabrication of several nanomaterials at reduced temperatures, allowing thermosensitive substrates to be covered with good formability and uniformity. In this review article, we comprehensively describe how the NTP changed the ALD universe and expanded it in device fabrication for different applications. We also present an overview of the efforts and developed strategies to gather the NTP and ALD technologies with the consecutive formation of plasma-assisted ALD (PA-ALD) technique, which has been successfully applied in nanofabrication and surface modification. The advantages and limitations currently faced by this technique are presented and discussed. We conclude this review by showing the atomic layer etching (ALE) technique, another development of NTP and ALD junction that has gained more and more attention by allowing significant advancements in plasma-assisted nanofabrication.