The thermal contact resistance is a difficult problem that has puzzled many researchers in measuring the intrinsic thermal conductivity of an individual carbon nanotube (CNT). To avoid this problem, a non-contact Raman spectra shift method is introduced, by which we have successfully measured the thermal conductivity (kappa) of an individual single-walled carbon nanotube and a multi-walled carbon nanotube. The measured kappa values are 2400 W m(-1) K(-1) and 1400 W m(-1) K(-1), respectively. The CNT was suspended over a trench and heated by electricity. The temperature difference between the middle and the two ends of the CNT indicated its intrinsic heat transfer capability. The temperature difference was determined by the temperature-induced shifts of its G band Raman spectra. This new method can eliminate the impact of the thermal contact resistance which was a Gordian knot in many previous measurements.

Monolayer graphene is obtained by mechanical exfoliation using scotch tapes. The effects of thermal annealing on the tape residues and edges of graphene are researched. Atomic force microscope images showed that almost all the residues could be removed in N₂/H₂ at 400°C but only agglomerated in vacuum. Raman spectra of the annealed graphene show both the 2D peak and G peak blueshift. The full width at half maximum (FWHM) of the 2D peak becomes larger and the intensity ratio of the 2D peak to G peak decreases. The edges of graphene are completely attached to the surface of the substrate after annealing.

In this study, we developed a series of second-order gradient overlap-coupling octagonal superconducting quantum interference device (SQUID) current sensors for transition edge sensor (TES) applications. According to the requirements of TESs, we designed various parameters of SQUID current sensors, including different Josephson junction (JJ) sizes, different hysteresis and screening parameters, input coils with different inductances. The superconducting loop, input coil, and feedback coil of the SQUID current sensors adopt a second-order gradient structure, which can effectively enhance their anti-interference electromagnetic capability. Further, all the coupling structures between the superconducting loop and input/feedback coil adopt overlap-coupling octagonal structures, which can effectively enhance the coefficient of coupling mutual inductance. A series of second-order gradient SQUID current sensors overlap-coupled with input coils of 1.5, 2.5, and 5.5 turns based on Nb/Al–AlO _x /Nb JJs were successfully fabricated on 2 inch silicon wafers by optimising the fabrication processes. From the simulation results, a minimal magnetic coupling factor of 0.02 between the feedback coil and input coil is obtained in the overlapped structure of the SQUID current sensor with an input coil of 1.5 turns; thus the magnetic interference between the feedback coil and input coil in this design is negligible. According to the measurement results at liquid–helium temperatures, SQUID current sensors with second-order gradient overlap-coupling octagonal structures have an excellent capability to weaken environmental electromagnetic interference. The SQUID current sensor with an input coil of 5.5 turns has the smallest current sensitivity, 2.4 μA/Φ₀ and lowest current noise, 1 pA (√Hz)⁻¹ compared with those of other input coils of different turns. The SQUID current sensor with an input coil of 2.5 turns has the lowest flux noise, 0.3 μΦ₀ (√Hz)⁻¹, and the lowest coupled noise energy, 11 h, among all the three different input coils, which are balanced results between the input inductance and the device noise. SQUID current sensors with second-order gradient overlap-coupling octagonal structures show low flux noise, low current noise, and low coupled noise energy, which can be compared with the state-of-art SQUID current sensor worldwide, and can satisfy the requirements of TES applications.

As Nb films are widely used as superconducting electrodes of Josephson junctions, it is important to investigate the properties of Nb films in order to fabricate high-quality Josephson junctions. In this work, we conducted a comprehensive analysis of the relationships among the properties of DC magnetron sputtered Nb films with a constant power fabricated at the National Institute of Metrology (China). The film properties, including superconductivity, stress, lattice constant, and surface roughness, were investigated. It was found that in the case of constant power and Ar pressure, the stress and other parameters of the Nb films can maintain a relatively stable state during the continuous consumption of the target material.

SiO₂ is one of the most widely used dielectric materials in optical and electronic devices. The Josephson voltage standard (JVS) chip fabrication process has rigorous requirements for the deposition temperature and step-coverage profiles of the SiO₂ insulation layer. In this study, we deposited high-quality SiO₂ insulation films at 60 °C using inductively coupled plasma-chemical vapor deposition (ICP-CVD) to fulfill these requirements and fabricate JVS chips simultaneously. SiO₂ films have a high density, low compressive stress, and a sloped sidewall profile over the vertical junction steps. The sidewall profiles over the vertical junction steps can be adjusted by changing the radio frequency (RF) power, ICP power, and chamber pressure. The effects of sputtering etch and sloped step coverage were enhanced when the RF power was increased. The anisotropy ratio of the deposition rate between the sidewall and the bottom of the film was lower, and the sloped step coverage effect was enhanced when the ICP power was increased, or the deposition pressure was decreased. The effects of the RF power on the stress, density, roughness, and breakdown voltage of the SiO₂ films were also investigated. Despite increased compressive stress with increasing RF power, the film stress was still low and within acceptable limits in the device. The films deposited under optimized conditions exhibited improved densities in the Fourier transform infrared spectra, buffered oxide etch rate, and breakdown voltage measurements compared with the films deposited without RF power. The roughness of the film also decreased. The step-coverage profile of the insulation layer prepared under optimized conditions was enhanced in the junction and bottom electrode regions; additionally, the performance of the device was optimized. This study holds immense significance for increasing the number of junctions in future devices.