The operating temperature is an essential parameter determining the performance of a photovoltaic (PV) module. Moreover, the estimation of the temperature in the absence of measurements is very complex, especially for outdoor conditions. Fortunately, several models with and without wind speed have been proposed to predict the outdoor operating temperature of a PV module. However, a problem for these models is that their accuracy decreases when the sampling interval is smaller due to the thermal inertia of the PV modules. In this paper, two models, one with wind speed and the other without wind speed, are proposed to improve the precision of estimating the operating temperature of outdoor PV modules. The innovative aspect of this study is two novel thermal models that consider the variation of solar irradiation over time and the thermal inertia of the PV module. The calculation is applied to different types of PV modules, including crystalline silicon, thin film as well as tandem technology at different locations. The models are compared to models that are described in the literature. The results obtained in different time steps show that our proposed models achieve better performance and can be applied to different PV technologies.

The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current. The use of such a technique puts additional requirements on the compact models that are used for these p-GaN gate HEMTs. An accurate compact model is needed, which considers a change in the doping profile in the p-GaN layer of these devices. This article reviews the relationship between the gate bias and the voltage drops at the different junctions in the gate structure (i.e., at the metal/p-GaN Schottky junction and the p-GaN/AlGaN/GaN junctions) considering an engineered doping profile. This relationship is then used to model the drain–source current ( $\textit{I}_{\text{DS}}$ ) and gate leakage current ( $\textit{I}_{\textit{G}}$ ). Three different regimes in the gate current have been considered in the model: Poole–Frenkel (PF) under low bias, thermionic emission (TE) in the medium bias range, and thermally assisted tunneling (TAT) at higher bias.