Dr. Stefaan Decoutere received his M.Sc. degree in electronic engineering and his Ph.D. degree from Katholieke Universiteit (KU) Leuven, Belgium, in 1986 and 1992, respectively. He has been with the Interuniversity Microelectronics Center (IMEC), Leuven, since 1987, where he started in high-voltage BCD technology development. From 1992 to 1997, he was in charge of the development of high-speed BiCMOS and SiGe HBT technologies. In 1998, he became the Head of the Mixed Signal/RF Technology Group, IMEC. Since 2010, he has been managing the GaN power electronics technology development, and in 2015, he became the Director of the GaN Power Electronics Program. Dr. Decoutere has been an IMEC Fellow since 2023.