This study used the Area Elimination Method (AEM) of transformer design with transformer characteristic simulation. The multidimensional variable of physical parameters such as magnetic density, current density, voltage and coil turn was performed. This method was used in designing the 8000 kVA 22,000–3300/1905 V oil-type large distribution transformer. The result from a design found that the objective function tries to reduce the material to be used, and less core steel, less conductors, less transformer oil or less transformer tanks may cause an increasing load loss or increasing temperature rise, but we have calculated the temperature in the winding and design the radiator fins at the same time. After designing the transformer with AEM and it being manufactured in the production process, the transformer was tested according to IEC standards. It was confirmed that the power loss tests with no load yielded lower power loss than the standard value. In addition, the transformer passed the satisfaction test and the results of this design were built and tested with IEC 60076 standards. The information from the design using the Area Elimination Method could be a guarantee of standardized accuracy for oil distribution transformers. This also saves time and increases design efficiency for transformer designers.

This study was aimed to present a Technical loss analysis of the Provincial Electricity Authority (PEA) in Hatyai. To determine the technical loss in the distribution system included are Transmission Line Losses, Power Transformer Losses, Distribution Line Losses and Lowvoltage Transformer and Distribution Line Losses. It was found that Low-voltage Transformer and Distribution Line Losses had a maximum value of 79 % and Technical loss was at 3.43. So in controlling or decrease Technical loss, the appropriate and correct method had to be selected by investigating both cost and worth. This study was also to determine distribution line losses by electrical model and to report on the power losses evaluation method as an improvement method to reduce the investigation cost for both transformer and capacitor selection. The study further aims at increasing the efficiency and reliability of the distribution system by reducing Technical Losses by increasing feeder size, power factor correction, reducing feeder impedance, lower transformer losses. It was discovered that line losses have much value at the end line. This was found to decrease when loads have constant distribution and are near the source. That is, line losses have lower value when lead lines have a larger size. Both load distribution and lead line sizes were observed to affect distribution line losses.

Aluminum and indium codoping zinc oxide (AIZO) films have been deposited simultaneously on polyethylene terephthalate (PET) substrate by radio frequency (RF) magnetron sputtering technique at room temperature (from a ceramic target) prepared with a mixture of zinc oxide (ZnO), aluminum (Al), and indium oxide (In₂O₃) of varying RF power range from 50 to 100 W and working pressure range from 2.5 to 15 mTorr. In order to obtain an acceptable performance rate with high-quality conducting thin films, the effect of correlation between the electrical, optical, and microstructural properties was investigated. The electrical resistivity significantly declined, and the carrier concentration improved as a result of In₂O₃ and Al incorporation within the ZnO and the increasing RF power. In this case, the best optical and electrical results were deposited at the RF power of 100 W with the working pressure of 2.5 mTorr. We were practicable to fabricate AIZO/PET electrodes of the lowest resistivity (7.6 x 10⁻¹,Ω -cm), the highest mobility, carrier concentration (8.29 x 10¹ cm²/vs and 9.8 x 10²⁰ cm⁻¹, respectively), and the maximum transmittance (83%-96%) along an energy bandgap range of 3.3-3.65 eV with a well crystalline structure showing a roughness surface of the AIZO films and a suitable Herzberg-Teller (HT). Thus, according to these expressions, we could be responsible for preparing AIZO/PET with improved electrical property and microstructure of great applications for flexible electronic devices.

This research has developed a process for producing ZnO thin film from DEZn deposited onto a PET substrate with low-pressure, high-frequency Ar + O₂ plasma using a chemical vapor deposition technique. The aim is to study the film production conditions that affect electrical properties, optical properties, and thin film surfaces. This work highlights the use of plasma energy produced from a mixture of gases between Ar + O₂. Plasma production is stimulated by an RF power supply to deliver high chemical energy and push ZnO atoms from the cathode inside the reactor onto the substrate through surface chemical reactions. The results showed that increasing the RF power in plasma production affected the chemical reactions on the substrate surface of film formations. Film preparation at an RF power of 300 W will result in the thickest films. The film has a continuous columnar formation, and the surface has a granular structure. This results in the lowest electrical resistivity of 1.8 × 10⁻⁴ Ω. In addition, when fabricated into a DSSC device, the device tested the PCE value and showed the highest value at 5.68%. The reason is due to the very rough surface nature of the ZnO film, which increases the scattering and storage of sunlight, making cells more efficient. Therefore, the benefit of this research is that it will be a highly efficient prototype of thin film production technology using a chemical process that reduces production costs and can be used in the industrial development of solar cells.

Dye-sensitized solar cells (DSSCs) are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, indium tin oxide (ITO)-nanorod films were fabricated by electron (E)-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated with oxygen plasma via a bias-magnetron radio-frequency (RF) sputtering process to improve the efficiency of DSSCs under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The field emission scanning electron microscopy (FE-SEM) investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSCs efficiency (η) test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest η. Hence, plasma technology can be practically applied to improve the η of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.

This research has developed a process for producing ZnO thin film from DEZn deposited onto a PET substrate with low-pressure, high-frequency Ar + O2 plasma using a chemical vapor deposition technique. The aim is to study the film production conditions that affect electrical properties, optical properties, and thin film surfaces. This work highlights the use of plasma energy produced from a mixture of gases between Ar + O2. Plasma production is stimulated with an RF power supply to deliver high chemical energy and push ZnO atoms from the cathode inside the reactor onto the substrate through surface chemical reactions. The results showed that increasing the RF power in plasma production affected the chemical reactions on the substrate surface of film formation. The film preparation at RF power 300 W will give the thickest films. The film has a continuous columnar formation, and the surface has a granular structure. This results in the lowest electrical resistivity of 1.8 x 10-4 Ω-cm. In addition, when fabricated into a DSSC device, the device tested the PCE value and showed the highest value at 5.68%. This is due to the very rough surface nature of the ZnO film, which increases the scattering and storage of sunlight, making cells more efficient. Therefore, the benefit of this research is that it will be a highly efficient prototype of thin film production technology using a chemical process that reduces production costs and can be used in the industrial development of solar cells.