This research presents an analysis of the five-position angle in both single-axis (one-axis tracking) and dual-axis (two-axis tracking) solar tracking systems. The study compares these tracking systems, where four solar panels move simultaneously, with a fixed solar panel system. The findings revealed that the five-position angle Sun-tracking technique resulted in lower energy consumption by the tracking mechanism than in the case of an all-time solar tracking system. The key component of the implemented system is a light-dependent resistor (LDR) sensor for controlling the motion of the motor for five positions on the vertical axis and horizontal axis, processed by a microcontroller to ensure the necessary solar tracking always moves in a perpendicular direction. According to the results, the voltage, current, and power increased with both one-axis and two-axis tracking compared to those of the fixed solar panel system under the same conditions. However, when evaluating the total energy with numerical integration methods, one-axis and two-axis provided 183.12 Wh and 199.79 Wh, respectively. Consequently, the energy production of the one-axis tracking system and the one-axis tracking system was found to be 16.71% and 24.97%, respectively, when compared to the fixed-axis system. Thus, the five-position angles of the sun-tracking technique resulted in lower energy consumption than is the case of an all-time solar tracking system.

This research has developed a process for producing ZnO thin film from DEZn deposited onto a PET substrate with low-pressure, high-frequency Ar + O₂ plasma using a chemical vapor deposition technique. The aim is to study the film production conditions that affect electrical properties, optical properties, and thin film surfaces. This work highlights the use of plasma energy produced from a mixture of gases between Ar + O₂. Plasma production is stimulated by an RF power supply to deliver high chemical energy and push ZnO atoms from the cathode inside the reactor onto the substrate through surface chemical reactions. The results showed that increasing the RF power in plasma production affected the chemical reactions on the substrate surface of film formations. Film preparation at an RF power of 300 W will result in the thickest films. The film has a continuous columnar formation, and the surface has a granular structure. This results in the lowest electrical resistivity of 1.8 × 10⁻⁴ Ω. In addition, when fabricated into a DSSC device, the device tested the PCE value and showed the highest value at 5.68%. The reason is due to the very rough surface nature of the ZnO film, which increases the scattering and storage of sunlight, making cells more efficient. Therefore, the benefit of this research is that it will be a highly efficient prototype of thin film production technology using a chemical process that reduces production costs and can be used in the industrial development of solar cells.

Dye-sensitized solar cells (DSSCs) are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, indium tin oxide (ITO)-nanorod films were fabricated by electron (E)-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated with oxygen plasma via a bias-magnetron radio-frequency (RF) sputtering process to improve the efficiency of DSSCs under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The field emission scanning electron microscopy (FE-SEM) investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSCs efficiency (η) test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest η. Hence, plasma technology can be practically applied to improve the η of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.

This research has developed a process for producing ZnO thin film from DEZn deposited onto a PET substrate with low-pressure, high-frequency Ar + O2 plasma using a chemical vapor deposition technique. The aim is to study the film production conditions that affect electrical properties, optical properties, and thin film surfaces. This work highlights the use of plasma energy produced from a mixture of gases between Ar + O2. Plasma production is stimulated with an RF power supply to deliver high chemical energy and push ZnO atoms from the cathode inside the reactor onto the substrate through surface chemical reactions. The results showed that increasing the RF power in plasma production affected the chemical reactions on the substrate surface of film formation. The film preparation at RF power 300 W will give the thickest films. The film has a continuous columnar formation, and the surface has a granular structure. This results in the lowest electrical resistivity of 1.8 x 10-4 Ω-cm. In addition, when fabricated into a DSSC device, the device tested the PCE value and showed the highest value at 5.68%. This is due to the very rough surface nature of the ZnO film, which increases the scattering and storage of sunlight, making cells more efficient. Therefore, the benefit of this research is that it will be a highly efficient prototype of thin film production technology using a chemical process that reduces production costs and can be used in the industrial development of solar cells.

DSSC devices are among the most widely studied thin-film solar cells because of their cost-effectiveness, low toxicity, and simple fabrication method. However, there is still much scope for replacing current DSSC materials due to their high cost, low volume, and lack of long-term stability. Accordingly, ITO-nanorod films were fabricated by E-beam evaporation using the glancing angle deposition method in this study. Then, the ITO-nanorod was treated by oxygen plasma via a bias-magnetron RF sputtering process to improve the efficiency of DSSC under a varying gas flow rate of 20, 40, 60, 80, and 100 sccm. The FE-SEM investigation of the ITO film structure revealed that the obtained nanorod structures have slightly different diameters. At the same time, an increase in the oxygen flow rate resulted in a rougher film surface structure. In this, the lower sheet resistance was received because of rougher morphology. When comparing the DSSC efficiency test results, we found that at a gas flow rate of 100 sccm, the highest efficiency value showed by 9.5%. On the other hand, the ITO-nanorod without plasma treatment exhibited the lowest efficiency. Hence, plasma technology can be practically applied to improve the efficiency of DSSC devices. This study will be a prototype of a highly advanced solar cell manufacturing method for the solar cell industry.

The surface characterization of indium tin oxide (ITO) films was processed by oxygen (O2) plasma gas using a magnetron sputtering method of varying O2-plasma gas from 20 sccm to 100 sccm for potentially fostering in electronic devices applications on dye-sensitize solar cells (DSSC) in this work. In order to gain an outstanding performance rate with high-quality thin films, the affect of correlation between the electrical, optical, and morphology properties was significantly investigated. Clearly, the content of investigation exhibited that the films properties was changed by variation of the gas composition. These changes have contemporary relevance to the sputtering gas during the deposition process. To conclude, the greatest electrical properties was displayed by O2 -plasma gas flow rate of 20 sccm, which showed the lowest resistivity. In addition to this, the final products were practically fabricated to active layers for dye-sensitize solar cells (DSSC) applications. The highest efficiency of DSSC device was indicated of approximately 0.35% which was located by 40 sccm of the O2-plasma gas. Consequently, the study could be a possibility way of preparing ITO thin films with improved special properties of substantial applications for solar cells devices in the near future.