Graphene oxide (GO) decorated with silver (Ag), copper (Cu) or platinum (Pt) nanoparticles that are anchored on dodecylbenzene sulfonic acid (DBSA)-doped polyaniline (PANI) were prepared by a simple one-step method and applied as novel materials for high performance supercapacitors. High-resolution transmission electron microscopy (HRTEM) and high-resolution scanning electron microscopy (HRSEM) analyses revealed that a metal-decorated polymer matrix is embedded within the GO sheet. This caused the M/DBSA–PANI (M = Ag, Cu or Pt) particles to adsorb on the surface of the GO sheets, appearing as aggregated dark regions in the HRSEM images. The Fourier transform infrared (FTIR) spectroscopy studies revealed that GO was successfully produced and decorated with Ag, Cu or Pt nanoparticles anchored on DBSA–PANI. This was confirmed by the appearance of the GO signature epoxy C–O vibration band at 1040 cm⁻¹ (which decreased upon the introduction of metal nanoparticle) and the PANI characteristic N–H stretching vibration band at 3144 cm⁻¹ present only in the GO/M/DBSA–PANI systems. The composites were tested for their suitability as supercapacitor materials; and specific capacitance values of 206.4, 192.8 and 227.2 F·g⁻¹ were determined for GO/Ag/DBSA–PANI, GO/Cu/DBSA–PANI and GO/Pt/DBSA–PANI, respectively. The GO/Pt/DBSA–PANI electrode exhibited the best specific capacitance value of the three electrodes and also had twice the specific capacitance value reported for Graphene/MnO₂//ACN (113.5 F·g⁻¹). This makes GO/Pt/DBSA–PANI a very promising organic supercapacitor material.

A generation 1 poly(propylene thiophenoimine)-co-poly(ethylenedioxy thiophene) (G1PPT-co-PEDOT) star copolymer, which exhibits a strong optical absorption over a broad range in the ultraviolet–visible (UV-Vis) region and with good electro/conductive properties, was chemically prepared for the first time. Synthesis of the star copolymer, G1PPT-co-PEDOT was confirmed by spectroscopic studies. Indeed, the disappearance of the very high intensity bands, C–H bending at α-position (687 cm⁻¹), and C=N stretching (1620 cm⁻¹) in the Fourier transform infrared spectroscopy (FTIR) of G1PPT-co-PEDOT, which were initially present in the spectrum of the thiolated starting material, G1PPT, confirmed copolymerization. Furthermore, a large bathochromic shift in the onset wavelength of the UV-Vis absorbance spectra from 367 nm in G1PPT to 674 nm in G1PPT-co-PEDOT further attests of successful copolymerization. The electrochemical analysis of G1PPT-co-PEDOT achieved a highest occupied molecular orbital (HOMO) energy level value of 5.3 eV, which is reminiscent of the value for an ideal electron-donor material. Photoluminescence quenching of up to 82% was observed in solution blends of the G1PPT-co-PEDOT star copolymer and N,N′-diisopropyl naphthalene diimide (NDI). This demonstrates the occurrence of photoinduced intermolecular charge transfer (PICT) from the electron-donating G1PPT-co-PEDOT to the electron accepting NDI, a good property, beneficial for optoelectronic and photovoltaic applications.

In this study, electron-donating semicrystalline generation 1 poly(propylene thiophenoimine)-co-poly(3-hexylthiophene) star copolymer, G1PPT-co-P3HT was chemically prepared for the first time. Copolymerization was achieved with high molecular weight via facile green oxidative reaction. ¹H NMR analyses of the star copolymer demonstrated the presence of 84% regioregular (rr) head-to-tail (HT) P3HT, which accounts for the molecular ordering in some grain regions in the macromolecule’s morphology, as revealed by the high-resolution scanning electron microscopy (HRSEM) and Selected Area Electron Diffraction (SAED) images, and X-ray diffraction spectroscopy (XRD) measurements. The star copolymer also exhibited good absorption properties in the ultraviolet-visible (UV-Vis) and the near infrared (NIR) spectral regions, which give rise to an optical energy bandgap value as low as 1.43 eV. A HOMO energy level at −5.53 eV, which is below the air-oxidation threshold, was obtained by cyclic voltammetry (CV). Electrochemical impedance spectroscopy (EIS) ascertained the semiconducting properties of the macromolecule, which is characterized by a charge transfer resistance, R_ct, value of 3.57 kΩ and a Bode plot-phase angle value of 75°. The combination of the EIS properties of G1PPT-co-P3HT and its highly electron-donating capability in bulk heterojunction (BHJ) active layer containing a perylene derivative, as demonstrated by photoluminescence quenching coupled to the observed Förster Resonance charge transfer, suggests its suitability as an electron-donor material for optoelectronic and photovoltaic devices.

Recently, much research has focused on the search for new mixed donor–acceptor layers for applications in organic electronics. Organic heterostructures with layers based on the generation 1 poly(propylene thiophenoimine) (G1PPT) dendrimer, N,N′-diisopropylnaphthalene diimide (MNDI), and a combination of the two were prepared and their electrical properties were investigated. Single layers of G1PPT and MNDI and a mixed layer (G1PPT:MNDI) were obtained via spin coating on quartz glass, silicon, and glass/ITO substrates, using chloroform as a solvent. The absorption mechanism was investigated, the degree of disorder was estimated, and the emission properties of the layers were highlighted using spectroscopic methods (UV–Vis transmission and photoluminescence). The effects of the concentration and surface topographical particularities on the properties of the layers were analyzed via atomic force microscopy. All of the heterostructures realized with ITO and Au electrodes showed good conduction, with currents of the order of mA. Additionally, the heterostructure with a mixed layer exhibited asymmetry in the current–voltage curve between forward and reverse polarization in the lower range of the applied voltages, which was more significant at increased concentrations and could be correlated with rectifier diode behavior. Consequently, the mixed-layer generation 1 poly(propylene thiophenoimine) dendrimer with N,N′-diisopropylnaphthalene diimide can be considered promising for electronic applications.