New luminescent zinc complexes were obtained by reaction of pyrazolone-based azomethine ligands with Zn(CH₃COO)₂·2H₂O. Complexes fully characterized by elemental analysis, FTIR, ES–MS, NMR, and single crystal X-ray analysis. Title complexes in the solid state demonstrate tunable luminescence from blue to orange by varying of substituents on the aromatic ring. Quantum yields are in the 0.03 to 0.49 range. TGA data shows that obtained complexes demonstrate high thermal stability and can be used as electroluminescent materials. The electrical properties of the complexes under study were considered in the ITO-Zncomplex-Al “sandwich” structure.

The electrochemical and electrical properties of a Zn(II) Schiff-base hybrid organic complex (C₄₈H₄₂N₆O₂Zn), as well as their temperature dependences, were studied comprehensively. To determine whether this compound is promising as a semiconductor material, thin films were obtained using the centrifugation method. The preparation procedure, synthesis, surface microscopy, and procedure for measuring the temperature dependences of the electrical properties of the obtained thin films are described. The temperature range of measurements was from 270 to 330 K. The energy levels of the lowest unoccupied molecular orbital and the highest occupied molecular orbital were determined by cyclic voltammetry. The energy of activation calculated from the linear approximations of the current–voltage characteristics in Arrhenius coordinates was 0.65 eV. The analysis of the current–voltage characteristics of the ITO–PBAL–Al (where ITO is indium–tin oxide and PBAL is C₄₈H₄₂N₆O₂Zn) structure showed that they correspond to the typical characteristics of Schottky diodes with a charge mobility of ~1.18 × 10^–11 cm² V^–1 s^–1. To study the mechanisms of charge transfer, the capacitance–voltage characteristics of the samples were investigated at a frequency of 1 kHz. The concentration of charge carriers was calculated using the Mott–Schottky relationship.

Исследование направлено на разработку методики формирования структур с барьером Шоттки в виде многослойной сэндвич-структуры Al-Ag2S-ITO, в состав которой в качестве фоточувствительного элемента входит конденсат коллоидных квантовых точек Ag2S, пассивированных молекулами тиогликолевой кислоты (КТ Ag2S/TGA). Спектральные свойства исследовали с помощью спектрометра USB2000+ (Ocean Optics, USA) с источником излучения USB-DT (Ocean Optics, USA). Электрофизические и фотоэлектрические свойства исследуемых структур измерялись анализатором полупроводников Keysight B1500A (Keysight Technologies, США). Исследование температурных зависимостей этих свойств в диапазоне от 300 до 360 К реализовано в экранированной камере (клетка Фарадея), помещенной в муфельную печь. Установлено, что проводимость структуры Al-Ag2S-ITO преимущественно определяется барьером Шоттки на границе Al-плёнка конденсата КТ Ag2S. На границе раздела плёнка конденсата КТ Ag2S-Al найдены признаки образования выпрямляющего контакта. Под действием оптического излучения с длиной волны 650 нм и менее, соответствующей наиболее вероятному экситонному переходу в оптическом поглощении света КТ Ag2S/TGA для отрицательной ветви ВАХ, найдено увеличение тока. The study is aimed at developing a technique for forming a structure with a Schottky barrier in the form of a mltilayer Al-Ag2S-ITO sandwich structure, which includes a condensate of colloidal Ag2S quantum dots passivated with thioglycolic acid molecules (Ag2S/TGA QDs). The spectral properties were studied using a USB2000+ spectrometer (Ocean Optics, USA) with a USB-DT light source (Ocean Optics, USA). Electrophysical and photoelectric properties of the structures were studied using a Keysight B1500A semiconductor device analyzer (Keysight tech, USA). The study of the temperature dependences of the properties in the temperature range from 300 to 360 K was carried out in a Shielded room (Faraday cage) placed in a muffle furnace. It was found that the conductivity of the Al-Ag2S-ITO structure is mostly governed by the Schottky barrier at the Al-condensed Ag2S QDs film junction. At the junction between the condensed Ag2S QDs film and Al, signs of the formation of a rectifying contact were found. Under the action of the optical radiation with a wavelength of 650 nm and less, which corresponds to the most probable exciton transition in the UV-Vis absorption of Ag2S/TGA QDs, an increase in the current was found for the negative branch of the J-V curve.

An organocarbon heterostructure consisting of thin films of fullerene and 4-methylphenylhydrazone N-isoamylisatin was obtained from a solution by irrigation. The procedure for obtaining the samples, the microscopy, and synthesis of the initial powder material have been described. The results of an alternate X-ray phase analysis of the substances used has been presented. The analysis of changes in the electrical and optical characteristics of the active layers, depending on the mass of the solid phase has been carried out. The relationship between a sequential increase in film thickness and an increase in the absorption coefficient of infrared electromagnetic radiation has been revealed. Having determined the optimal thicknesses of the active layers of the heterostructure, based on fullerene C60 and 4-methylphenylhydrazone N-isoamylisatin, we achieved an increase in photoconductivity by two orders of magnitude. The obtained light current – voltage characteristics of such thin-film structures are rectilinear in nature with a direct load of up to 10 V.

The results of studying the electrical properties of thin films of colloidal quantum dots (QDs), Ag2S/SiO2 and Ag2S/SiO2/Au, are interesting and important for understanding the behavior of these materials. Additional studies made it possible to determine the temperature dependences of conductivity in the range from 300 to 360 K, which made it possible to study changes in the electrical properties of materials depending on temperature. Activation energy values obtained from linear approximations of current-voltage characteristics in Arrhenius coordinates have become key to determining energy barriers and conduction mechanisms in these systems. Decorating Ag2S quantum dots with plasmonic gold nanoparticles also has the potential to improve the electrical properties of materials and create new functional characteristics. The results obtained can have a wide range of applications in the field of nanoelectronics, optoelectronics, sensors and other technologies that require precise control of the electrical properties of materials at different temperatures. Decoration of Ag2S/SiO2 QDs with plasmonic gold nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. This effect can be explained by the interaction between gold plasmons and Ag2S/SiO2 electrons, which leads to a change in the properties of the material. It has been shown that decorating Ag2S/SiO2 QDs with Au nanoparticles leads to a change in the type of conductivity. Finally, calculating the mobility of charge carriers according to the Mott-Gurney model allows for a deeper understanding of the conductivity mechanisms in the presented thin-film structures.