In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

This study explores the low-temperature synthesis of graphene using plasma-enhanced chemical vapor deposition (PECVD), emphasizing the optimization of process parameters to achieve controlled growth of pristine and hydrogenated graphene. Graphene films were synthesized at temperatures ranging from 700 °C to as low as 400 °C by varying methane (25–100 sccm) and hydrogen (25–100 sccm) gas flow rates under 10–20 mBar pressures. Raman spectroscopy revealed structural transitions: pristine graphene grown at 700 °C exhibited strong 2D peaks with an I(2D)/I(G) ratio > 2, while hydrogenated graphene synthesized at 500 °C showed increased defect density with an I(D)/I(G) ratio of ~1.5 and reduced I(2D)/I(G) (~0.8). At 400 °C, the material transitioned to a highly hydrogenated amorphous carbon film, confirmed by photoluminescence (PL) in the Raman spectra. Atomic force microscopy (AFM) showed pristine graphene with a root mean square roughness (R_q) of 0.37 nm. By carefully adjusting PECVD synthesis parameters, it was possible to tune the surface roughness of hydrogenated graphene to levels close to that of pristine graphene or to achieve even smoother surfaces. Conductive AFM measurements revealed that hydrogenation could enhance graphene’s contact current under specific conditions. The findings highlight the role of PECVD parameters in tailoring graphene’s structural, morphological, and electronic properties for diverse applications. This work demonstrates a scalable, low-temperature approach to graphene synthesis, offering the potential for energy storage, sensing, and electronic devices requiring customized material properties.

Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO₂ interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO₂/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the microwave plasma-enhanced chemical vapor deposition (MW-PECVD) technique. The decomposition of methane, which is used as a precursor gas, is achieved without the need for remote plasma. Raman spectroscopy, atomic force microscopy and resistance characteristic measurements were performed to investigate the potential of graphene for use in sensing applications. We show that the thickness and quality of graphene film greatly depend on the CH₄/H₂ flow ratio, as well as on chamber pressure during the synthesis. By varying these parameters, the intensity ratio of Raman D and G bands of graphene varied between ~1 and ~4, while the 2D to G band intensity ratio was found to be 0.05–0.5. Boundary defects are the most prominent defect type in PECVD graphene, giving it a grainy texture. Despite this, the samples exhibited sheet resistance values as low as 1.87 kΩ/□. This reveals great potential for PECVD methods and could contribute toward efficient and straightforward graphene growth on various substrates.

Graphene/h-BN/Si heterostructures show considerable potential for future use in infrared detection and photovoltaic technologies due to their adjustable electrical behavior and well-matched interfacial structure. The near-lattice match between graphene and hexagonal boron nitride (h-BN) enables the deposition of low-defect-density graphene on h-BN surfaces. This study presents a thorough exploration of the low-frequency electrical noise behavior of graphene/h-BN/Si heterojunctions under both forward and reverse bias conditions at room temperature. Graphene nanolayers were directly grown on h-BN films using microwave plasma-enhanced CVD. The h-BN layers were formed by reactive high-power impulse magnetron sputtering (HIPIMS). Four h-BN thicknesses were examined: 1 nm, 3 nm, 5 nm, and 15 nm. A reference graphene/Si junction (without h-BN) prepared under identical synthesis conditions was also studied for comparison. Low-frequency noise analysis enabled the identification of dominant charge transport mechanisms in the different device structures. Our results demonstrate that grain boundaries act as dominant defects contributing to increased noise intensity under high forward bias. Statistical analysis of voltage noise spectral density across multiple samples, supported by Raman spectroscopy, reveals that hydrogen-related defects significantly contribute to 1/f noise in the linear region of the junction’s current–voltage characteristics. This study provides the first in-depth insight into the impact of h-BN interlayers on low-frequency noise in graphene/Si heterojunctions.