A photopolymerizable thiol-ene composition was prepared as a mixture of pentaerythritol tetrakis(3-mercaptopropionate) (PETMP) and 1,3,5-triallyl-1,3,5-triazine-2,4,6(1H,3H,5H)-trione (TTT), with 1 wt. % of 2,2-dimethoxy-2-phenylacetophenone (DMPA) photoinitiator. A systematic analytical analysis that investigated the crosslinked PETMP-TTT polymer coatings employed Fourier transform infrared spectroscopy, ultraviolet–visible spectroscopy, differential scanning calorimetry, thermogravimetric analysis, pencil hardness, thermo-mechanical cyclic tensile, scratch testing, and atomic force microscopy. These coatings exhibited high optical transparency and shape-memory that assisted scratch-healing properties. Scratches produced on the PETMP-TTT polymer coatings with different constant loadings (1.2 N, 1.5 N, and 2.7 N) were completely healed after the external stimulus was applied. The strain recovery ratio and total strain recovery ratio for PETMP-TTT polymer were found to be better than 94 ± 1% and 97 ± 1%, respectively. The crosslinked PETMP-TTT polymer network was also capable of initiating scratch recovery at ambient temperature conditions.

In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

This study explores the low-temperature synthesis of graphene using plasma-enhanced chemical vapor deposition (PECVD), emphasizing the optimization of process parameters to achieve controlled growth of pristine and hydrogenated graphene. Graphene films were synthesized at temperatures ranging from 700 °C to as low as 400 °C by varying methane (25–100 sccm) and hydrogen (25–100 sccm) gas flow rates under 10–20 mBar pressures. Raman spectroscopy revealed structural transitions: pristine graphene grown at 700 °C exhibited strong 2D peaks with an I(2D)/I(G) ratio > 2, while hydrogenated graphene synthesized at 500 °C showed increased defect density with an I(D)/I(G) ratio of ~1.5 and reduced I(2D)/I(G) (~0.8). At 400 °C, the material transitioned to a highly hydrogenated amorphous carbon film, confirmed by photoluminescence (PL) in the Raman spectra. Atomic force microscopy (AFM) showed pristine graphene with a root mean square roughness (R_q) of 0.37 nm. By carefully adjusting PECVD synthesis parameters, it was possible to tune the surface roughness of hydrogenated graphene to levels close to that of pristine graphene or to achieve even smoother surfaces. Conductive AFM measurements revealed that hydrogenation could enhance graphene’s contact current under specific conditions. The findings highlight the role of PECVD parameters in tailoring graphene’s structural, morphological, and electronic properties for diverse applications. This work demonstrates a scalable, low-temperature approach to graphene synthesis, offering the potential for energy storage, sensing, and electronic devices requiring customized material properties.

Graphene was synthesized directly on Si(100) substrates by microwave plasma-enhanced chemical vapor deposition (MW-PECVD). The effects of the graphene structure on the electrical and photovoltaic properties of graphene/n-Si(100) were studied. The samples were investigated using Raman spectroscopy, atomic force microscopy, and by measuring current–voltage (I-V) graphs. The temperature of the hydrogen plasma annealing prior to graphene synthesis was an essential parameter regarding the graphene/Si contact I-V characteristics and photovoltaic parameters. Graphene n-type self-doping was found to occur due to the native SiO₂ interlayer at the graphene/Si junction. It was the prevalent cause of the significant decrease in the reverse current and short-circuit current. No photovoltaic effect dependence on the graphene roughness and work function could be observed.

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO₂/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

Transparent polymer layers that heal minor scratches and maintain the optical properties of the devices for a long time are highly desirable in optoelectronics. This paper presents the results of the electrical characterization of thin PEDOT:PSS films on the novel, optically transparent thiol–ene substrates capable of healing scratches under room-temperature conditions. Electrical properties of the PEDOT:PSS films deposited on the conventional alumina ceramic substrates were also tested for comparative purposes. This study demonstrated that the substrate can have a significant effect on the electrical properties of PEDOT:PSS films, and the electrical resistance of the films on thiol–ene substrates is not as stable as on alumina ceramics. However, the changes in electrical resistance of the films on thiol–ene are small enough over a sufficiently wide range of operating temperatures and relative humidities and allow the application of such bilayers in various polymeric optoelectronic devices.