This paper reports, for the first time, on the electrical percolation threshold in oxidized carbon nanohorns (CNHox)–polyvinylpyrrolidone (PVP) films. We demonstrate—starting from the design and synthesis of the layers—how these films can be used as sensing layers for resistive relative humidity sensors. The morphology and the composition of the sensing layers are investigated through Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and RAMAN spectroscopy. For establishing the electrical percolation thresholds of CNHox in PVP, these nanocomposite thin films were deposited on interdigitated transducer (IDT) dual-comb structures. The IDTs were processed both on a rigid Si/SiO₂ substrate with a spacing of 10 µm between metal digits, and a flexible substrate (polyimide) with a spacing of 100 µm. The percolation thresholds of CNHox in the PVP matrix were equal to (0.05–0.1) wt% and 3.5 wt% when performed on 10 µm-IDT and 100 µm-IDT, respectively. The latter value agreed well with the percolation threshold value of about 4 wt% predicted by the aspect ratio of CNHox. In contrast, the former value was more than an order of magnitude lower than expected. We explained the percolation threshold value of (0.05–0.1) wt% by the increased probability of forming continuous conductive paths at much lower CNHox concentrations when the gap between electrodes is below a specific limit. The change in the nanocomposite’s longitudinal Young modulus, as a function of the concentration of oxidized carbon nanohorns in the polymer matrix, is also evaluated. Based on these results, we identified a new parameter (i.e., the inter-electrode spacing) affecting the electrical percolation threshold in micro-nano electronic devices. The electrical percolation threshold’s critical role in the resistive relative-humidity sensors’ design and functioning is clearly emphasized.

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V_F with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni₂Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R² reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.