Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high-κ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that NBTI degradation is less severe when increasing the physical height of the silicon fin. The increased fin height results in a lower effective defect density, believed to be related to a reduced role of the defective fin corners and/or top surface. In addition, activation energies for the capture process in tall fins during NBTI stress show lower values while charge trapping in standard height fins is highly temperature dependent. PBTI results reveal a similar, albeit less severe, impact of fin height, suggesting an impact of fin height on the high-κ layer, with again an increased defectivity at the fin corners and/or top surface, whose effective role is reduced in the case of taller fin. On the other hand, PBTI shows limited temperature dependence, independent of fin height.

This study analyzed the accuracy of solar cell modeling parameters extracted from noisy data using Genetic Algorithms (GAs). Three crossover operators (XOs) were examined, namely the Uniform (UXO), Arithmetic (AXO), and Blend (BXO) operators. The data used were an experimental benchmark cell and a simulated curve where noise levels (p) from 0 to 10% were added. For each XO, the analysis was carried out by running GAs 100 times and varying p and population size (Npop). Simulation results showed that UXO and AXO suffered from premature convergence and failed to provide parameters with good precision even with very high Npop, although they provided good fitting. In all analyzed cases, BXO outperformed UXO and AXO and the results showed that it can compete with the most efficient methods. For the benchmark curve, BXO reproduced the best RMSE found in the literature (0.7730062 mA) while providing the exact values of the parameters and a very low RMSE (1E-13) for the clean curve (p=0). For noisy curves, the errors of the extracted parameters were smaller than 10% for p lower than or equal to 6%. For higher values of p, the errors were smaller than 30%.