Isolated current sensing is fundamental in several contexts, including power electronics, automotive, and smart buildings. In order to meet the requirements of modern applications, current sensors should feature ever larger bandwidth and dynamic range, as well as reduced power consumption and dimension. Among the available current sensing technologies, Hall-based current sensors have gained an increased popularity owing to their advantages in terms of size, economic feasibility, low power consumption, high dynamic range, and integrability with standard CMOS technologies. This tutorial aims at providing a comprehensive insight into the interdisciplinary world of Hall-effect current sensors, encompassing the fundamental principles of operation, the design of the semiconductor device, the implementation techniques, as well as the methods for sensor modeling and characterization. In particular, this manuscript focuses on Hall-effect sensors realized on standard silicon technologies, and it reviews some typical architectures for the transduction of the measurand current into a magnetic field, as well as the electronic front-end. While this tutorial is mainly addressed to students and non-expert readers, specific design aspects and dispersion effects due to temperature and other external phenomena are also discussed.

Current sensing readout is one of the most frequent techniques used in biosensing due to the charge-transfer phenomena occurring at solid-liquid interfaces. The development of novel nanodevices for biosensing determines new challenges for electronic interface design based on current sensing, especially when compact and efficient arrays need to be organized, such as in recent trends of rapid label-free electronic detection of DNA synthesis. This paper will review the basic noise limitations of current sensing interfaces with particular emphasis on integrated CMOS technology. Starting from the basic theory, the paper presents, investigates and compares charge-sensitive amplifier architectures used in both continuous-time and discrete-time approaches, along with their design trade-offs involving noise floor, sensitivity to stray capacitance and bandwidth. The ultimate goal of this review is providing analog designers with helpful design rules and analytical tools. Also, in order to present a comprehensive overview of the state-of-the-art, the most relevant papers recently appeared in the literature about this topic are discussed and compared.

This article presents a compact measurement system for electrochemical impedance spectroscopy (EIS) on lithium-ion battery (LIB). The system is composed of a vector impedance analyzer (VIA) and state parameter estimation. The VIA architecture is based on delta-sigma digital-to-analog and analog-to-digital conversions to achieve the compactness, low-power consumption, and high resolution required to be potentially integrated within a battery cell. The estimation of state parameters is based on equivalent circuit models and the solution of nonlinear optimization problems. The proposed measurement system aims at the integration of complex measurement features directly into the battery cell to allow online and real-time diagnostic of the battery cell. A prototype of the compact measurement system was realized to assess the proposed approach. Experimental results are provided and validated by comparison with a reference laboratory instrument, showing good agreement. The VIA prototype is experimentally tested in both the online monitoring and aging monitoring of a commercial LIR2032 LIB cell. The modeling approach is applied to the experimental data provided by the VIA prototype, showing a good fit of the data. Moreover, parameters of the equivalent circuit models are extracted from the experimental data provided by the VIA prototype and identify trends related to the state of charge of the battery.

This paper presents a broadband ([dc-megahertz (MHz)]) current sensor for power applications, which is based only on a Hall-effect probe as the core sensing element. Unlike common solutions for broadband current sensing, the proposed architecture is suitable for integration of the measurement system on the same low-cost CMOS chip used for the power electronics (e.g., Bipolar-CMOS-DMOS), without the need for external transformers and allowing for the realization of “smart power circuits.” The Hall-effect probe is biased by implementing the offset compensation-oriented spinning-current technique through a novel front-end, designed to push the operative bandwidth toward the fundamental limit of the probe. Specifically, the proposed front-end employs switches, which are typical of spinning-current techniques, only for biasing the Hall probe, while the readout process is performed by minimum-sized differential amplifiers. In this way, the capacitive load seen by the Hall probe is minimized and the sensor practical bandwidth upper limit is strongly increased. A prototype of the proposed architecture was operated at 8-MHz spinning frequency and characterized by means of standard figures of merit, demonstrating the broadband capability and an adequate overall performance. At the same time, the prototype revealed a new bandwidth limit, masked in conventional architectures by stronger capacitance-induced effects, which is represented by a degradation of the effectiveness of the spinning-current technique. Measured performance is comparable to that of standard, nonintegrated, current sensors, demonstrating the effectiveness of the presented purely Hall approach for broadband current sensing. The architecture was validated by discussing two case studies typical of power applications.

Online diagnostic of lithium-ion battery (LIB) cells may have significant impact on chemical energy storage systems. Electrochemical impedance spectroscopy (EIS) is widely used for the characterization of LIBs and could be the most appropriate technique for online diagnostic, but its response time should be shortened. This work investigates the usage of multisine excitation to shorten the measurement time and simplify the hardware implementation for EIS of battery cells. Two types of multisine binary sequences are considered: sigma–delta modulated multisine sequences (SDMSs) and maximum length binary sequences (MLBSs). Their applicability to online and in situ EIS monitoring is evaluated by designing a measurement architecture also suitable to be implemented in a system-on-chip. The calibrated measurement system is compared with a benchtop reference instrument, reporting an RMSE deviation smaller than 5% in the frequency range of interest 1–200 Hz. The realized system is then used for online monitoring of the discharge process of a commercial 18650 LIB cell. The two proposed sequences are compared in terms of accuracy using a digital battery emulator circuit. Both the sequences demonstrated to be suitable for fast measurement and simple hardware integration, enabling online in situ EIS monitoring at cell level.

This paper presents the X-Hall sensor, a viable sensing architecture for implementing a silicon-integrated, broadband, current/magnetic sensor. The X-Hall sensor overcomes the bandwidth limit of the state-of-the-art Hall sensors by replacing the spinning-current technique with DC-biased-based, passive offset compensation. In this way, the X-Hall architecture removes the methodological bandwidth limit due to the spinning-current technique and allows for exploiting the Hall probe up to its practical limit, which is set by the parasitic capacitive effects. Moreover, the X-Hall architecture allows to push the practical bandwidth limit at higher frequencies due to both the removal of the switches inherent in the spinning-current approach and a specifically designed analog front-end. To this end, a differential-difference current-feedback amplifier (DDCFA) is proposed as analog front-end in the X-Hall sensor. A prototype of the proposed X-Hall architecture is implemented in BCD 0.16-μm silicon technology to experimentally assess the performance of the X-Hall architecture. The passive offset compensation implemented into the X-Hall architecture is frequency independent and preserves an adequate offset reduction performance, though less efficient than the spinning-current technique operated at low frequency. Experimental dynamic tests on the prototype identify the presence of an additive parasitic dynamic perturbation due to the package that prevents from fully exploiting the X-Hall prototype up to its designed bandwidth limit. However, the implementation of a post de-emphasis digital filter allows to mitigate for the dynamic perturbation and to experimentally achieve a sensor bandwidth of 4 MHz, which is the broadest bandwidth ever demonstrated by a purely Hall-effect based sensor.