We present a parameter set for obtaining the maximum number of atoms in a grating magneto-optical trap (gMOT) by employing a machine learning algorithm. In the multi-dimensional parameter space, which imposes a challenge for global optimization, the atom number is efficiently modeled via Bayesian optimization with the evaluation of the trap performance given by a Monte-Carlo simulation. Modeling gMOTs for six representative atomic species - ⁷Li, ²³Na, ⁸⁷Rb, ⁸⁸Sr, ¹³³Cs, ¹⁷⁴Yb - allows us to discover that the optimal grating reflectivity is consistently higher than a simple estimation based on balanced optical molasses. Our algorithm also yields the optimal diffraction angle which is independent of the beam waist. The validity of the optimal parameter set for the case of ⁸⁷Rb is experimentally verified using a set of grating chips with different reflectivities and diffraction angles.

In this paper, we propose and analyze a through silicon via (TSV) with a silicon dioxide well (SDW) to reduce leakage current in the design of a high-speed signaling and low-power consumption high-bandwidth memory (HBM) interface. In the proposed TSV, the SDW is inserted into the silicon substrate area between TSVs. By inserting the SDW, the silicon substrate’s effective conductivity and permittivity are lowered compared to a conventional TSV. The proposed TSV with the SDW improves insertion loss by up to 0.079 dB at 4 GHz by minimizing the leakage current. In addition, by reducing the effective permittivity of the silicon substrate, the difference in ratio between the capacitive coupling and inductive coupling is minimized. It is also possible to obtain a reduction in far-end crosstalk (FEXT) in the range of HBM interface signaling. RLGC modeling of the proposed TSV with the SDW is presented, and is physically analyzed based on the frequency-dependent equivalent capacitance and conductance of the silicon substrate. The proposed TSV with SDW is finally evaluated using an eye diagram, and the eye height and width improved by up to 13.7 % and 4.7 % at 8 Gb/s, respectively, compared to the conventional TSV. The proposed TSV also reduced dynamic power consumption by 48.1 % at 8 Gb/s, verifying the low-power structure.

We report a chip-scale atomic magnetometer based on coherent population trapping, which can operate near zero magnetic field. By exploiting the asymmetric population among magnetic sublevels in the hyperfine ground state of cesium, we observe that the resonance signal acquires sensitivity to magnetic field in spite of degeneracy. A dispersive signal for magnetic field discrimination is obtained near-zero-field as well as for finite fields (tens of micro-tesla) in a chip-scale device of 0.94 cm³ volume. This shows that it can be readily used in low magnetic field environments, which have been inaccessible so far in miniaturized atomic magnetometers based on coherent population trapping. The measured noise floor of 300 pT/Hz^1/2 at the zero-field condition is comparable to that of the conventional finite-field measurement obtained under the same conditions. This work suggests a way to implement integrated atomic magnetometers with a wide operating range.

In this paper, we propose, analyze and design a through silicon via (TSV) with a passive equalizer (PEQ) to mitigate the inter-symbol interference (ISI) and separate the return path for next-generation high bandwidth memory (HBM). The proposed HBM TSV includes a PEQ into the region between the signal TSV and ground TSV. We suggest the two-design structure of PEQ using the inductance and resistance. The proposed HBM TSV with PEQ provides two advantages. First, ISI can be suppressed by increasing the bandwidth or reducing the reflection caused by multi-drop topology. Second, the crosstalk can be reduced by separating return paths between the different signal TSVs. Based on the analytical modeling, the physical meaning of the proposed HBM TSV is presented. The channel loss, group delay, crosstalk, and time domain waveform are analyzed in terms of signal integrity for the proposed HBM TSV. Analysis and design method of the proposed HBM TSV are suggested to find an optimization point to define the resistance, inductance, and position of the PEQ. The proposed HBM TSV is evaluated based on the eye-diagram. Finally, from the practical point of view, the proposed HBM TSV fabrication process is also described.

To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 μm or 12 μm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.

Acoustic matching layer films (MLFs) were fabricated using B-stage thermosetting polymer resins with various volume fractions of alumina and tungsten powders. After making certain thickness MLFs, ultrasonic matching layers were fabricated using a simple molding process. The thickness of the matching layers can be precisely adjusted from several micron to hundreds of micron, without any grinding process. Experimental values of acoustic impedances of the matching layers were in good agreement with theoretical values calculated by the Devaney model. Using the optimized acoustic matching layer by the MLFs, the maximum intensity and the fractional bandwidth of the ultrasonic transducer were increased by 10% and 37% respectively. The effectiveness of the matching layer using MLFs was successfully verified.