The improved phase congruency (PC) algorithms have been successfully applied to optical and synthetic aperture radar (SAR) image registration since they are insensitive to nonlinear radiometric and geometric differences. However, most of the algorithms are sensitive to large-scale differences and rotation differences between optical and SAR images. To tackle this, we propose a PC framework to register optical and SAR images. It is compatible with large-scale and rotation invariance. Firstly, a multi-scale Harris keypoint extraction method based on the maximum moment of PC (named PC-Harris) is proposed. The scale space is constructed by combining PC with the log-Gabor filter. Secondly, we propose a PC model to construct the feature descriptors. The orientation and amplitude responses are obtained based on the PC model. Meanwhile, the novel descriptor is constructed based on the polar coordinate system and thus can handle the scale and rotation differences between optical and SAR images. Finally, outliers are removed by the fast sample consensus (FSC). The experiments conducted on several optical and SAR images verify the effectiveness of the proposed framework.

InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

In this study, nanosecond-pulse lasing was achieved using a vertical-external-cavity surface-emitting laser (VECSEL) with only a single gain chip. A simple linear-cavity setup was used for the VECSEL, and pulsed lasing with a pulse width of ∼9 ns and a repetition frequency of ∼54 MHz was achieved. Dual-wavelength lasing at 974 and 978 nm was observed. The average output power during pulsed operation exceeded 100 mW. As the pumping power was increased, the laser output power could be switched off. However, stable dual-wavelength emission was maintained. The maximum output power under dual-wavelength operation could reach 455 mW.