The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.

As LiDAR technology progressively advances, the capability of radar in detecting targets has become increasingly vital across diverse domains, including industrial, military, and automotive sectors. Frequency-modulated continuous-wave (FMCW) LiDAR in particular has garnered substantial interest due to its efficient direct velocity measurement and excellent anti-interference characteristics. It is widely recognized for its significant potential within radar technology. This study begins by elucidating the operational mechanism of FMCW LiDAR and delves into its basic principles. It discuss, in depth, the influence of various parameters on FMCW LiDAR’s performance and reviews the latest progress in the field. This paper proposes that future studies should focus on the synergistic optimization of key parameters to promote the miniaturization, weight reduction, cost-effectiveness, and longevity of FMCW LiDAR systems. This approach aims at the comprehensive development of FMCW LiDAR, striving for significant improvements in system performance. By optimizing these key parameters, the goal is to promote FMCW LiDAR technology, ensuring more reliable and accurate applications in automated driving and environmental sensing.

Photonic integrated circuits (PICs) play a leading role in modern information and communications technology. Among the core devices in PICs is the distributed feedback (DFB) multi-wavelength semiconductor laser array. Multi-wavelength semiconductor laser arrays can be integrated on a single chip and have the advantages of high stability, good single-mode performance, and narrow line width. The wavelength tuning range has been expanded through the design of the DFB laser array, which is an ideal light source for wavelength-division multiplexing systems. The preparation of DFB laser arrays with a large number of channels, ease of mass production, and accurate emission wavelengths has become an important field of research. The connection methods of lasers in DFB laser arrays are introduced systematically and the current methods of manufacturing multi-wavelength DFB laser arrays covering the perspective of technical principles, technical advantages and disadvantages, main research progress, and research status are summarized.

Selective area epitaxy (SAE) using metal–organic chemical vapor deposition (MOCVD) is a crucial fabrication technique for lasers and photonic integrated circuits (PICs). A low-cost, reproducible, and simple process for the mass production of semiconductor lasers with specific structures was realized by means of SAE. This paper presents a review of the applications of SAE in semiconductor lasers. Growth rate enhancement and composition variation, which are two unique characteristics of SAE, are attributed to a mask. The design of the mask geometry enables the engineering of a bandgap to achieve lasing wavelength tuning. SAE allows for the reproducible and economical fabrication of buried heterojunction lasers, quantum dot lasers, and heteroepitaxial III–V compound lasers on Si. Moreover, it enables the fabrication of compact photonic integrated devices, including electro-absorption modulated lasers and multi-wavelength array lasers. Results show that SAE is an economical and reproducible method to fabricate lasers with desired structures. The goals for SAE applications in the future are to improve the performance of lasers and PICs, including reducing the defects of the grown material introduced by the SAE mask and achieving precise control of the thickness and composition.

A narrow linewidth tunable laser source is a critical component in various fields, including laser radar, quantum information, coherent communication, and precise measurement. Tunable external cavity diode lasers (ECDLs) demonstrate excellent performance, such as narrow linewidth, wide tunable range, and low threshold current, making them increasingly versatile and widely applicable. This article provides an overview of the fundamental structures and recent advancements in external cavity semiconductor lasers. In particular, we discuss external cavity semiconductor lasers based on quantum well and quantum dot gain chips. The structure of the gain chip significantly influences laser’s performance. External cavity quantum well laser has a narrower linewidth, higher power, and better mode stability. Conversely, external cavity quantum dot laser provides a wider tunable range and a remarkably lower threshold current. Furthermore, dual-wavelength external cavity tunable diode lasers are gaining importance in applications such as optical switching and terahertz radiation generation. With the continuous optimization of chips and external cavity structures, external cavity diode lasers are increasingly recognized as promising light sources with narrow linewidth and wide tunability, opening up broader application prospects.