Tunable semiconductor lasers have many important applications such as wavelength division multiplexing, light detection and ranging, and gas detection. The increased interest in silicon photonics has led to the rapid development of miniaturized on‐chip tunable semiconductor lasers. However, silicon has poor light‐emitting properties. Therefore, realizing high‐performance tunable semiconductor lasers requires the integration of light sources with silicon. In this study, we review silicon‐based light source integration methods and the development of silicon‐based integrated tunable semiconductor lasers. Considering that narrow‐linewidth performance greatly expands the applications of tunable semiconductor lasers, methods for reducing the linewidth of tunable lasers are summarized. Finally, the development trends and prospects for silicon‐based integrated light sources and silicon‐based integrated tunable lasers are analyzed and discussed.

The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including free-space communication; industrial processing; and the medical, aerospace, and military fields, as well as other fields. The reliability of high-power semiconductor lasers is the key point of the application system. Higher reliability is sought in the military defense and aerospace fields in particular. Reliability testing and failure analysis help to improve the performance of high-power semiconductor lasers. This article provides a basis for understanding the reliability issues of semiconductor lasers across the whole supply chain. Firstly, it explains the failure modes and causes of failure in high-power semiconductor lasers; this article also summarizes the principles and application status of accelerated aging experiments and lifetime evaluation; it also introduces common techniques used for high-power semiconductor laser failure analysis, such as the electron beam-induced current (EBIC) technique and the optical beam-induced current (OBIC) technique, etc. Finally, methods used to improve the reliability of high-power semiconductor lasers are proposed in terms of the preparation process, reliability screening, and method application.

As LiDAR technology progressively advances, the capability of radar in detecting targets has become increasingly vital across diverse domains, including industrial, military, and automotive sectors. Frequency-modulated continuous-wave (FMCW) LiDAR in particular has garnered substantial interest due to its efficient direct velocity measurement and excellent anti-interference characteristics. It is widely recognized for its significant potential within radar technology. This study begins by elucidating the operational mechanism of FMCW LiDAR and delves into its basic principles. It discuss, in depth, the influence of various parameters on FMCW LiDAR’s performance and reviews the latest progress in the field. This paper proposes that future studies should focus on the synergistic optimization of key parameters to promote the miniaturization, weight reduction, cost-effectiveness, and longevity of FMCW LiDAR systems. This approach aims at the comprehensive development of FMCW LiDAR, striving for significant improvements in system performance. By optimizing these key parameters, the goal is to promote FMCW LiDAR technology, ensuring more reliable and accurate applications in automated driving and environmental sensing.

The high-precision diffraction grating is an important chromatic dispersion component that has been widely used in many fields, including laser beam combining, chirped pulse compression, spectroscopy, among others. In this paper, we review the development status of reflection and transmission gratings with high diffraction efficiency and high laser-induced damage thresholds, such as metal-film and multilayer-dielectric-film gratings. Then, we review the basic principles and most recent stages in the development of manufacturing techniques, such as mechanical scribing, holographic exposure, electron-beam lithography, and nanoimprinting.