This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors. We point out that the reported result may depend very much on the method used to determine the effective area of the sensor, often leading to discrepancies of up to orders of magnitude. The challenges that arise when selecting a proper method for characterisation are demonstrated using the example of a $2\times 7$ detector array. This array utilises field-effect transistors and monolithically integrated patch antennas at 620 GHz. The directivities of the individual antennas were simulated and determined from the measured angle dependence of the rectified voltage, as a function of tilting in the E- and H-planes. Furthermore, this study shows that the experimentally determined directivity and simulations imply that the part of radiation might still propagate in the substrate, resulting in modification of the sensor effective area. Our work summarises the methods for determining sensitivity which are paving the way towards the unified scientific metrology of FET-based THz sensors, which is important for both researchers competing for records, potential users, and system designers.

We present experimental results of an investigation into the performance of a commercial, packaged GaAs high-electron-mobility transistor (HEMT) as a detector of terahertz radiation in the frequency ranges 0.22-0.32 THz and 0.520-0.650 THz. Enclosed in a standard ceramic housing and without a dedicated antenna for radiation coupling, the transistor is capable of sensitive direct detection (power detection) of THz radiation at room temperature. Thedevice responsivity shows a strong variation with wavelength indicating that various device features (transistor metallization, contact pads, wires) act as an effective THz antenna. With the THz radiation focused with a parabolic mirror (and without a substrate lens), the maximum responsivity reaches 2.5 and 0.72 V/W with values of the minimum optical noise-equivalent power of 1.4 and 2.5 nW/ $\sqrt$ Hz at the sensitivity peaks at 0.271 and 0.632 THz, respectively. The performance of the HEMT, in comparison with antenna-coupled FET detectors optimized for THz detection (TeraFETs), can be assessed better if the responsivity and the NEP are referred to the effective antenna cross-section determined experimentally for the device. We arrive at a cross-sectional responsivity of 42 V/W (1.6 V/W) and a cross-sectional NEP of 135 pW/ $\sqrt$ Hz (1250 pW/ $\sqrt$ Hz) at 0.271 THz (0.632 THz), for measurements through the ceramic cap. The cross-sectional NEP values are about one order of magnitude at 0.271 THz and two orders of magnitude at 0.632 THz higher than those achieved for the best TeraFETs, yet in a range where they enable many practical applications at low cost for the detector.