Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220×550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO₂ cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.

Advanced microsystems widely used in integrated optoelectronic devices, energy harvesting components, and microfluidic lab-on-chips require high-aspect silicon microstructures with a precisely controlled profile. Such microstructures can be fabricated using the Bosch process, which is a key process for the mass production of micro-electro-mechanical systems (MEMS) devices. One can measure the etching profile at a cross-section to characterize the Bosch process quality by cleaving the substrate into two pieces. However, the cleaving process of several neighboring deeply etched microstructures is a very challenging and uncontrollable task. The cleaving method affects both the cleaving efficiency and the metrology quality of the resulting etched microstructures. The standard cleaving technique using a diamond scriber does not solve this issue. Herein, we suggest a highly controllable cross-section cleaving method, which minimizes the effect on the resulting deep etching profile. We experimentally compare two cleaving methods based on various auxiliary microstructures: (1) etched transverse auxiliary lines of various widths (from 5 to 100 μm) and positions; and (2) etched dashed auxiliary lines. The interplay between the auxiliary lines and the etching process is analyzed for dense periodic and isolated trenches sized from 2 to 50 μm with an aspect ratio of more than 10. We experimentally showed that an incorrect choice of auxiliary line parameters leads to silicon “build-up” defects at target microstructures intersections, which significantly affects the cross-section profile metrology. Finally, we suggest a highly controllable defect-free cross-section cleaving method utilizing dashed auxiliary lines with the stress concentrators.

Photonic integrated circuits play a crucial role in almost every aspect of modern life, such as data storage, telecommunications, medical diagnostics, green energy, autonomous driving, agriculture, and high-performance computing. To fully harness their benefits, an efficient coupling mechanism is required to successfully launch light into on-chip waveguides from fibers. This study introduces low-loss coupling strategies and their implementation for silicon nitride integrated photonics. Here we present an overview of coupling technologies, optimized designs, and a fabrication technique for inverse tapers, which enable effective coupling for both transverse-magnetic and transverse-electric modes. We measured the coupling losses of 0.15 dB for UHNA-7 fiber at 1550 nm per facet for single-mode 220 × 1200 nm waveguides. We also designed, fabricated, and experimentally characterized a multi-tip taper, yielding 1.5 dB per facet at 1550 nm with broadband stability over 1500–1600 nm. We believe that our approach is universal and can be used both for individual fiber and fiber arrays coupling and for subsequent assembly of fiber with a chip, ensuring minimal losses.

Broadband impedance-matched Josephson parametric amplifiers are key components for high-fidelity single-shot multi-qubit readout. Nowadays, several types of impedance matched parametric amplifiers have been proposed: the first is an impedance-matched parametric amplifier based on a Klopfenstein taper, and the second is the impedance-matched parametric amplifier based on auxiliary resonators. Here, we present the quantum-limited 3-wave-mixing lumped-element SNAIL parametric amplifier with two-pole impedance matching transformer. A two-pole Chebyshev matching network with shunted resonators is based on parallel-plate capacitors and superconducting planar coil. Operating in a flux-pumped mode, we experimentally demonstrate an average gain of 15 dB across a 600 MHz bandwidth, along with an average saturation power of −107 dBm and quantum-limited noise temperature.

Nanoplasmonic waveguides utilizing surface plasmon polaritons (SPPs) propagation have been investigated for more than 15 years and are now well understood. Many researchers make their efforts to find the best ways of using light and overcoming the speed limit of integrated circuits by means of SPPs. Here, we introduce the simulation results and fabrication technology of dielectric-metal-dielectric long-range nanoplasmonic waveguides, which consists of a multilayer stack based on ultrathin noble metals in between alumina thin films. Various waveguide topologies are simulated to optimize all the geometric and multilayer stack parameters. We demonstrate the calculated propagation length of L_prop = 0.27 mm at the 785 nm wavelength for the Al₂O₃/Ag/Al₂O₃ waveguides. In addition, we numerically show the possibility to eliminate signal cross-talks (less than 0.01%) between two crossed waveguides. One of the key technology issues of such waveguides’ nanofabrication is a dry, low-damage-etching of a multilayer stack with extremely sensitive ultrathin metals. In this paper, we propose the fabrication process flow, which provides both dry etching of Al₂O₃/Au(Ag)/Al₂O₃ waveguides nanostructures with high aspect ratios and non-damage ultrathin metal films patterning. We believe that the proposed design and fabrication process flow provides new opportunities in next-generation photonic interconnects, plasmonic nanocircuitry, quantum optics and biosensors.