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Wenbo Luo
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, People’s Republic of China

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Article
Published: 16 August 2021 in Applied Physics A
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Flexible electronics is one of the most emerging fields of future electronic devices. The application of flexible inorganic membrane provides a feasible way to realize high-performance electronic device with desired deformation ability. In this paper, a method to fabricate large-scale flexible monocrystalline silicon membrane by crystal-ion-slicing (CIS) technique using benzocyclobutene (BCB) bonding layer is reported. With introduction of BCB bonding layer, a 1-μm-thick Si membrane with the size of 8 × 8 mm can be obtained on the polyimide substrate using the conventional CIS technique. Morphology and structure characterizations confirm the high crystallinity and structural integrity of the as-fabricated silicon membrane. Typical piezoresistive effect can be observed in the measured dependence of the resistance of Si membrane on the bending strain, indicating the potential to using this method to construct flexible force sensor with high stability and sensitivity.

ACS Style

Dailei Zhu; Wenbo Luo; Taisong Pan; Shitian Huang; Kaisheng Zhang; Qin Xie; Yao Shuai; Chuangui Wu; Wanli Zhang. Fabrication of large-scale flexible silicon membrane by crystal-ion-slicing technique using BCB bonding layer. Applied Physics A 2021, 127, 1 -9.

AMA Style

Dailei Zhu, Wenbo Luo, Taisong Pan, Shitian Huang, Kaisheng Zhang, Qin Xie, Yao Shuai, Chuangui Wu, Wanli Zhang. Fabrication of large-scale flexible silicon membrane by crystal-ion-slicing technique using BCB bonding layer. Applied Physics A. 2021; 127 (9):1-9.

Chicago/Turabian Style

Dailei Zhu; Wenbo Luo; Taisong Pan; Shitian Huang; Kaisheng Zhang; Qin Xie; Yao Shuai; Chuangui Wu; Wanli Zhang. 2021. "Fabrication of large-scale flexible silicon membrane by crystal-ion-slicing technique using BCB bonding layer." Applied Physics A 127, no. 9: 1-9.

Article
Published: 12 July 2021 in Journal of Materials Science: Materials in Electronics
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Memristor has become the most promising building block for neuromorphic computing. The memristors based on single-crystalline oxide film exhibit some advantages, such as the uniformity of device property. But currently the high energy consumption of memristor still hinders its future application. In this work, we used Ar+ irradiation to modulate the performance of memristor based on single-crystalline LiNbO3 (LN) thin film. During the Ar+ irradiation, the reduction of thin film thickness and the modulation of oxygen vacancies were observed simultaneously. The electroforming voltage and operation voltage of the memristors were reduced effectively, which makes the memristor become more energy-efficient. After Ar+ irradiation, the advantage in uniformity of device properties still maintained. The memristors based on Ar+ irradiated LN thin film also showed synaptic plasticity and self-rectifying property. The etching effect and preferential sputtering effect of Ar+ irradiation were observed and investigated, respectively. The synergy between the two effects was also discussed. This work provides the method to overcome the obstacle of application of memristor based on single-crystalline oxide thin film to neuromorphic computing, which makes the advantages of memristor based on single-crystalline oxide thin film, such as the uniformity of device property, fully used of.

ACS Style

Qin Xie; Xinqiang Pan; Wenbo Luo; Yao Shuai; Chuangui Wu; Jiejun Wang; Shitian Huang; Wen Luo; Wanli Zhang. Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film. Journal of Materials Science: Materials in Electronics 2021, 32, 20817 -20826.

AMA Style

Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Chuangui Wu, Jiejun Wang, Shitian Huang, Wen Luo, Wanli Zhang. Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film. Journal of Materials Science: Materials in Electronics. 2021; 32 (15):20817-20826.

Chicago/Turabian Style

Qin Xie; Xinqiang Pan; Wenbo Luo; Yao Shuai; Chuangui Wu; Jiejun Wang; Shitian Huang; Wen Luo; Wanli Zhang. 2021. "Effects of Ar+ irradiation on the performance of memristor based on single-crystalline LiNbO3 thin film." Journal of Materials Science: Materials in Electronics 32, no. 15: 20817-20826.

Research article
Published: 29 June 2021 in Advanced Electronic Materials
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The fabrication process and resistive switching properties of flexible single crystalline LiNbO3 (LN) thin films are reported in this paper. Single crystalline LN thin films are transferred onto polyimide (PI) substrate by crystal-ion-slicing (CIS) technique using benzocyclobutene (BCB) as bonding layer. Low energy Ar+ irradiation is carried out to introduce a layer with high concentration oxygen vacancies. Uniform and stable resistive switching behaviors are observed in different memristor cells on the same thin film, which can be attributed to the single crystalline properties of the fabricated LN thin films. The on/off ratio is almost the same even when the LN thin film is bended either to different radii or thousand times. Thus, based on CIS technique and Ar+ irradiation, the fabrication method of flexible single crystalline thin films for flexible memristor is established. These results indicate that single crystalline LN thin film on PI substrate is a promising candidate structure for flexible memristor devices. A novel conduction model combined filamentary mechanism and Schottky emission mechanism is proposed to explain the resistive switching behavior.

ACS Style

Shitian Huang; Wenbo Luo; Xinqiang Pan; Jinyan Zhao; Shijun Qiao; Yao Shuai; Kaisheng Zhang; Xiaoyuan Bai; Gang Niu; Chuangui Wu; Wanli Zhang. Resistive Switching Effects of Crystal‐Ion‐Slicing Fabricated LiNbO 3 Single Crystalline Thin Film on Flexible Polyimide Substrate. Advanced Electronic Materials 2021, 2100301 .

AMA Style

Shitian Huang, Wenbo Luo, Xinqiang Pan, Jinyan Zhao, Shijun Qiao, Yao Shuai, Kaisheng Zhang, Xiaoyuan Bai, Gang Niu, Chuangui Wu, Wanli Zhang. Resistive Switching Effects of Crystal‐Ion‐Slicing Fabricated LiNbO 3 Single Crystalline Thin Film on Flexible Polyimide Substrate. Advanced Electronic Materials. 2021; ():2100301.

Chicago/Turabian Style

Shitian Huang; Wenbo Luo; Xinqiang Pan; Jinyan Zhao; Shijun Qiao; Yao Shuai; Kaisheng Zhang; Xiaoyuan Bai; Gang Niu; Chuangui Wu; Wanli Zhang. 2021. "Resistive Switching Effects of Crystal‐Ion‐Slicing Fabricated LiNbO 3 Single Crystalline Thin Film on Flexible Polyimide Substrate." Advanced Electronic Materials , no. : 2100301.

Article
Published: 30 May 2021 in Applied Physics A
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Crystal ion slicing (CIS) technology has been widely applied to fabricate single-crystalline quality thin film, although the ion implantation process can cause lattice strain and electric properties changes in the fabricated film. In this paper, CIS-fabricated Z-cut LiTaO3 (LT) thin films were annealed under different temperatures and times by rapid thermal annealing (RTA). The effects of annealing parameters on microstructure and dielectric properties of LT films were studied. It is found that the lattice strain can be partially released by RTA according to the XRD diffraction peak shift and this lattice release also has an influence on the permittivity and dielectric loss. Additionally, anomalous recrystallization behavior has been observed in the samples annealed at higher temperature or longer time according to the abnormal grain growth revealed by AFM. Besides, unusual permittivity and dielectric loss increase in sample annealed at 600℃ was measured and it may result from the abnormal grain growth. In summary, it is indicated by the results that RTA is an effective way to release lattice strain and it can impact electric properties of CIS-fabricated LT thin film.

ACS Style

Kaisheng Zhang; Wenbo Luo; Shitian Huang; Xiaoyuan Bai; Yao Shuai; Chuangui Wu; Wanli Zhang. Effects of rapid thermal annealing parameters on crystal ion slicing-fabricated LiTaO3 thin film. Applied Physics A 2021, 127, 1 -7.

AMA Style

Kaisheng Zhang, Wenbo Luo, Shitian Huang, Xiaoyuan Bai, Yao Shuai, Chuangui Wu, Wanli Zhang. Effects of rapid thermal annealing parameters on crystal ion slicing-fabricated LiTaO3 thin film. Applied Physics A. 2021; 127 (6):1-7.

Chicago/Turabian Style

Kaisheng Zhang; Wenbo Luo; Shitian Huang; Xiaoyuan Bai; Yao Shuai; Chuangui Wu; Wanli Zhang. 2021. "Effects of rapid thermal annealing parameters on crystal ion slicing-fabricated LiTaO3 thin film." Applied Physics A 127, no. 6: 1-7.

Journal article
Published: 17 March 2021 in IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
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A solidly mounted resonator on flexible Polyimide (PI) substrate with high effective coupling coefficient (Kt2) of 14.06% is reported in this paper. This high Kt2 is resulting from the LiNbO3 (LN) single crystalline film and [SiO2/Mo]3 Bragg reflector. The quality of LN film fabricated by Crystal-ion-slicing (CIS) technique using Benzocyclobutene (BCB) bonding layer was close to the bulk crystalline LN. The interfaces of the Al/LN/Al/[SiO2/Mo]3 Bragg reflector/BCB/PI multilayer are sharp and the thickness of each layer is consistent with its design value. The resonant frequency and the Kt2 keep stable when it is bended at different radii. These results demonstrate a feasible approach to realizing RF filters on flexible polymer substrates, which is an indispensable device for building integrated and multi-functional wireless flexible electronic systems.

ACS Style

Shitian Huang; Wenbo Luo; Xiaoyuan Bai; Lu Lv; Xinqiang Pan; Yao Shuai; Chuangui Wu; Wanli Zhang. A Solidly Mounted Resonator Fabricated by LiNbO3 Single-Crystalline Film on Flexible Polyimide Substrate. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 2021, 68, 2585 -2589.

AMA Style

Shitian Huang, Wenbo Luo, Xiaoyuan Bai, Lu Lv, Xinqiang Pan, Yao Shuai, Chuangui Wu, Wanli Zhang. A Solidly Mounted Resonator Fabricated by LiNbO3 Single-Crystalline Film on Flexible Polyimide Substrate. IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control. 2021; 68 (7):2585-2589.

Chicago/Turabian Style

Shitian Huang; Wenbo Luo; Xiaoyuan Bai; Lu Lv; Xinqiang Pan; Yao Shuai; Chuangui Wu; Wanli Zhang. 2021. "A Solidly Mounted Resonator Fabricated by LiNbO3 Single-Crystalline Film on Flexible Polyimide Substrate." IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 68, no. 7: 2585-2589.

Journal article
Published: 27 January 2021 in Journal of Applied Physics
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The heterogeneous epitaxial system of BaTiO3/Ge (BTO/Ge) is of great interest for both fundamental research and device applications, thanks to its quasi-lattice-matching feature and the integration of functional oxides on semiconductors. Currently, the heteroepitaxial growth of crystalline BTO films on Ge includes the utilization of ultrahigh vacuum tools and complex surface passivation pre-treatment as well as careful control of oxygen partial pressure during the growth. Meanwhile, oxygen vacancies in oxides strongly impact their structural and electrical properties. Here, we report a facile method to directly grow single crystalline BTO films on Ge using pulsed laser deposition. The strict control of oxygen partial pressure ensures a sharp interface with an atom-to-atom registry and also leads to the oxygen-deficient characteristics of BTO. The epitaxial relationship of BTO and Ge is [110] BTO (001)//[100] Ge (001). Detailed crystallographic studies on BTO films with different thicknesses show that, for the films with a thickness less than 20 nm, BTO shows a mixture of tetragonal and cubic phases due to the oxygen vacancies and the strain from the Ge substrate and the cubic phase eventually dominates as the film thickness increases. Such oxygen-deficient BTO films reveal conducting characteristics rather than dielectric properties. The oxygen vacancies can be partly “cured” after a low temperature annealing process. These results not only demonstrate the possibility to directly grow single crystalline oxides on semiconductors without surface passivation but also highlight the importance of oxygen vacancies and lattice strain on the crystallographic and electrical properties of BTO films.

ACS Style

Liyan Dai; Gang Niu; Jinyan Zhao; Yingxian Xue; Ren Luo; Bohan Chen; Ruihua An; Yanxiao Sun; Boyuan Feng; Sunan Ding; Wenbo Luo; Zuo-Guang Ye; Wei Ren. Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation. Journal of Applied Physics 2021, 129, 045302 .

AMA Style

Liyan Dai, Gang Niu, Jinyan Zhao, Yingxian Xue, Ren Luo, Bohan Chen, Ruihua An, Yanxiao Sun, Boyuan Feng, Sunan Ding, Wenbo Luo, Zuo-Guang Ye, Wei Ren. Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation. Journal of Applied Physics. 2021; 129 (4):045302.

Chicago/Turabian Style

Liyan Dai; Gang Niu; Jinyan Zhao; Yingxian Xue; Ren Luo; Bohan Chen; Ruihua An; Yanxiao Sun; Boyuan Feng; Sunan Ding; Wenbo Luo; Zuo-Guang Ye; Wei Ren. 2021. "Oxygen vacancy induced phase and conductivity transition of epitaxial BaTiO3−δ films directly grown on Ge (001) without surface passivation." Journal of Applied Physics 129, no. 4: 045302.

Journal article
Published: 04 September 2020 in Journal of Applied Physics
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A 43° rotated Y-cut LiNbO3 (LN) single-crystal thin film coated with a bottom electrode and a Mo/Ti Bragg reflector is successfully transferred onto the 4-in. LN wafer substrate by means of crystal-ion-slicing (CIS) technique and benzocyclobutene bonding method. The multilayer film is crack-free, and the Mo/Ti reflector shows good acoustic reflection efficiency. A thin film bulk acoustic wave resonator based on the Mo/Ti Bragg reflector and the LN thin film (LN-BAW) is prepared, and the properties are further analyzed. The results indicate that the LN-BAW provides a large Kt2 of ∼16.63% and the Q-factor and figure-of-merit of the LN-BAW reach 183 and 30.4, respectively.

ACS Style

Xiaoyuan Bai; Yao Shuai; Lu Lv; Shitian Huang; Ying Xing; Jiaoling Zhao; Wenbo Luo; Chuangui Wu; Tao Yang; Wanli Zhang. Mo/Ti multilayer Bragg reflector for LiNbO3 film bulk acoustic wave resonators. Journal of Applied Physics 2020, 128, 094503 .

AMA Style

Xiaoyuan Bai, Yao Shuai, Lu Lv, Shitian Huang, Ying Xing, Jiaoling Zhao, Wenbo Luo, Chuangui Wu, Tao Yang, Wanli Zhang. Mo/Ti multilayer Bragg reflector for LiNbO3 film bulk acoustic wave resonators. Journal of Applied Physics. 2020; 128 (9):094503.

Chicago/Turabian Style

Xiaoyuan Bai; Yao Shuai; Lu Lv; Shitian Huang; Ying Xing; Jiaoling Zhao; Wenbo Luo; Chuangui Wu; Tao Yang; Wanli Zhang. 2020. "Mo/Ti multilayer Bragg reflector for LiNbO3 film bulk acoustic wave resonators." Journal of Applied Physics 128, no. 9: 094503.

Journal article
Published: 04 July 2020 in Sensors and Actuators A: Physical
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Pyroelectric infrared detectors are widely used owing to their uncooling characteristic and full infrared spectrum response. However, the increased volume and complex fabrication process due to the presence of an optical filter or resonant cavity, which is required to realize wavelength selection for every special application, makes it difficult to fabricate an integrated pyroelectric detector. Herein, we propose a wavelength-selective absorbing infrared detector in which a pyroelectric material is integrated with a metamaterial perfect absorber (MPA). A LiTaO3 single crystal with a metallic film on both sides was selected as the substrate, and a metal-dielectric-metal (MDM)-type MPA was deposited on its top. The MPA structure, consisting of a SiO2 dielectric layer and cross-type periodic units, provided a high selective absorption at 3.16 μm. With the incident radiation power transferred into heat by the dielectric layer and diffused into LiTaO3, a pyroelectric voltage was generated. This integration resulted in an infrared detector with a ∼90 % absorption at 3.16 μm and a detectivity of 3.2 × 107 cm Hz1/2W−1 at 26.3 Hz.

ACS Style

Kaisheng Zhang; Wenbo Luo; Shitian Huang; Xiaoyuan Bai; Yao Shuai; Yue Zhao; Xiangquan Zeng; Chuangui Wu; Wanli Zhang. Wavelength-selective infrared detector fabricated by integrating LiTaO3 with a metamaterial perfect absorber. Sensors and Actuators A: Physical 2020, 313, 112186 .

AMA Style

Kaisheng Zhang, Wenbo Luo, Shitian Huang, Xiaoyuan Bai, Yao Shuai, Yue Zhao, Xiangquan Zeng, Chuangui Wu, Wanli Zhang. Wavelength-selective infrared detector fabricated by integrating LiTaO3 with a metamaterial perfect absorber. Sensors and Actuators A: Physical. 2020; 313 ():112186.

Chicago/Turabian Style

Kaisheng Zhang; Wenbo Luo; Shitian Huang; Xiaoyuan Bai; Yao Shuai; Yue Zhao; Xiangquan Zeng; Chuangui Wu; Wanli Zhang. 2020. "Wavelength-selective infrared detector fabricated by integrating LiTaO3 with a metamaterial perfect absorber." Sensors and Actuators A: Physical 313, no. : 112186.

Journal article
Published: 24 March 2020 in Sensors
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In this paper we demonstrate a novel acoustic wave pressure sensor, based on an aluminum nitride (AlN) piezoelectric thin film. It contains an integrated vacuum cavity, which is micro-fabricated using a cavity silicon-on-insulator (SOI) wafer. This sensor can directly measure the absolute pressure without the help of an external package, and the vacuum cavity gives the sensor a very accurate reference pressure. Meanwhile, the presented pressure sensor is superior to previously reported acoustic wave pressure sensors in terms of the temperature drift. With the carefully designed dual temperature compensation structure, a very low temperature coefficient of frequency (TCF) is achieved. Experimental results show the sensor can measure the absolute pressure in the range of 0 to 0.4 MPa, while the temperature range is from 20 °C to 220 °C with a TCF of −14.4 ppm/°C. Such a TCF is only about half of that of previously reported works.

ACS Style

Tao Wang; ZhengJie Tang; Huamao Lin; Kun Zhan; Jiang Wan; Shihao Wu; Yuandong Gu; Wenbo Luo; Wanli Zhang. A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing. Sensors 2020, 20, 1788 .

AMA Style

Tao Wang, ZhengJie Tang, Huamao Lin, Kun Zhan, Jiang Wan, Shihao Wu, Yuandong Gu, Wenbo Luo, Wanli Zhang. A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing. Sensors. 2020; 20 (6):1788.

Chicago/Turabian Style

Tao Wang; ZhengJie Tang; Huamao Lin; Kun Zhan; Jiang Wan; Shihao Wu; Yuandong Gu; Wenbo Luo; Wanli Zhang. 2020. "A Low Temperature Drifting Acoustic Wave Pressure Sensor with an Integrated Vacuum Cavity for Absolute Pressure Sensing." Sensors 20, no. 6: 1788.

Journal article
Published: 27 September 2019 in Sensors and Actuators A: Physical
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LiTaO3 (LT) single crystalline films have been used to fabricate pyroelectric infrared detectors. Sub-micrometer thick LT films have been transferred on LT holder substrate by Crystal Ion Slicing (CIS) technology using hydrogen ions implantation and SiO2 bonding process. The surface roughness result from the Gauss distribution of hydrogen ions was decreased from 18.7 nm to 1.5 nm after Ar+ ion bombardment. The pyroelectric coefficient of CIS fabricated LT film (2 × 10−8 C/cm2·K) is comparable to that of LT bulk crystal. Detectors fabricated using the CIS fabricated LT films show larger detectivity at higher modulation frequency than the commercially available pyroelectric devices using LT bulk crystal or PZT polycrystalline thin films. The highest value of specific detectivity is 2.49 × 108 cm·Hz1/2W−1 at 300 Hz. The results demonstrate that the LT single crystal film fabricated by CIS technology is a promising material to fabricate quick response pyroelectric devices.

ACS Style

Jiarui Luo; Wenbo Luo; Kaisheng Zhang; Xiaowei Sun; Yao Shuai; Tao Wang; Chuangui Wu; Wanli Zhang. High specific detectivity infrared detector using crystal ion slicing transferred LiTaO3 single-crystal thin films. Sensors and Actuators A: Physical 2019, 300, 111650 .

AMA Style

Jiarui Luo, Wenbo Luo, Kaisheng Zhang, Xiaowei Sun, Yao Shuai, Tao Wang, Chuangui Wu, Wanli Zhang. High specific detectivity infrared detector using crystal ion slicing transferred LiTaO3 single-crystal thin films. Sensors and Actuators A: Physical. 2019; 300 ():111650.

Chicago/Turabian Style

Jiarui Luo; Wenbo Luo; Kaisheng Zhang; Xiaowei Sun; Yao Shuai; Tao Wang; Chuangui Wu; Wanli Zhang. 2019. "High specific detectivity infrared detector using crystal ion slicing transferred LiTaO3 single-crystal thin films." Sensors and Actuators A: Physical 300, no. : 111650.

Journal article
Published: 03 April 2019 in Microelectronic Engineering
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In this study, LiNbO3 (LNO) thin films prepared by crystal ion slicing (CIS) technology have been used to fabricate pyroelectric infrared detectors. Crack free LNO film with single crystal structure have been prepared on a LNO holder substrate by CIS technology using He+ implantation and benzocyclobutene (BCB) bonding process. The surface roughness caused by the Gauss distribution of He+ has been decreased from 10.81 nm to 4.66 nm after Ar+ treatment. The pyroelectric coefficient of LNO thin film is 5 × 10−5C/m2·K measured by dynamic method, which is comparable to LNO bulk crystal materials. The Rv value of infrared device fabricated by LNO single crystal film was calculated to be 1.93 × 103 V/W at 5 Hz chopper frequency. Compared to normally used SiO2 bonding layer, the thermal isolation properties have been improved by BCB bonding material according to the thermal finite element analysis. The results demonstrated CIS technology using BCB bonding materials is a promising method to fabricate integrated pyroelectric devices.

ACS Style

Wenbo Luo; Jiarui Luo; Yao Shuai; Kaisheng Zhang; Tao Wang; Chuangui Wu; Wanli Zhang. Infrared detector based on crystal ion sliced LiNbO3 single-crystal film with BCB bonding and thermal insulating layer. Microelectronic Engineering 2019, 213, 1 -5.

AMA Style

Wenbo Luo, Jiarui Luo, Yao Shuai, Kaisheng Zhang, Tao Wang, Chuangui Wu, Wanli Zhang. Infrared detector based on crystal ion sliced LiNbO3 single-crystal film with BCB bonding and thermal insulating layer. Microelectronic Engineering. 2019; 213 ():1-5.

Chicago/Turabian Style

Wenbo Luo; Jiarui Luo; Yao Shuai; Kaisheng Zhang; Tao Wang; Chuangui Wu; Wanli Zhang. 2019. "Infrared detector based on crystal ion sliced LiNbO3 single-crystal film with BCB bonding and thermal insulating layer." Microelectronic Engineering 213, no. : 1-5.

Journal article
Published: 01 July 2018 in Journal of Alloys and Compounds
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By creating acceptor states in band gap of lead selenide (PbSe), oxygen can act as an effective p-type dopant and eventually invert the conductivity from n-type to p-type. Fabrication of PbSe Photodiode was thus realized by introducing oxygen atoms into PbSe thin films via O2-plasma in our research. Typical diode characteristics and splendid photosensitivity was achieved in the as-fabricated PbSe photodiode. The detectivity was determined as 1.2 × 1011 cm Hz1/2/W, 1.2 × 1011 cm Hz1/2/W and 2.2 × 1010 cm Hz1/2/W at forward bias, reverse bias and zero bias, respectively. With a response time of millisecond level, great dynamic performance was achieved via this novel fabrication process. Dimension of oxygen-doped region as well as material properties were also characterized in this research.

ACS Style

Y.X. Ren; T.J. Dai; W.B. Luo; X.Z. Liu. Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment. Journal of Alloys and Compounds 2018, 753, 6 -10.

AMA Style

Y.X. Ren, T.J. Dai, W.B. Luo, X.Z. Liu. Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment. Journal of Alloys and Compounds. 2018; 753 ():6-10.

Chicago/Turabian Style

Y.X. Ren; T.J. Dai; W.B. Luo; X.Z. Liu. 2018. "Fabrication of lead selenide thin film photodiode for near-infrared detection via O2-plasma treatment." Journal of Alloys and Compounds 753, no. : 6-10.

Journal article
Published: 10 May 2018 in Sensors
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The temperature fluctuation in a single-phase microchannel heat sink (MCHS) is investigated using the integrated temperature sensors with deionized water as the coolant. Results show that the temperature fluctuation in single phase is not negligible. The causes of the temperature fluctuation are revealed based on both simulation and experiment. It is found that the inlet temperature fluctuation and the gas bubbles separated out from coolant are the main causes. The effect of the inlet temperature fluctuation is global, where the temperatures at different locations change simultaneously. Meanwhile, the gas bubble effect is localized where the temperature changes at different locations are not synchronized. In addition, the relation between temperature fluctuation and temperature gradient is established. The temperature fluctuation increases with the temperature gradient accordingly.

ACS Style

Tao Wang; Jiejun Wang; Jian He; Chuangui Wu; Wenbo Luo; Yao Shuai; Wanli Zhang; Chengkuo Lee. Investigation of the Temperature Fluctuation of Single-Phase Fluid Based Microchannel Heat Sink. Sensors 2018, 18, 1498 .

AMA Style

Tao Wang, Jiejun Wang, Jian He, Chuangui Wu, Wenbo Luo, Yao Shuai, Wanli Zhang, Chengkuo Lee. Investigation of the Temperature Fluctuation of Single-Phase Fluid Based Microchannel Heat Sink. Sensors. 2018; 18 (5):1498.

Chicago/Turabian Style

Tao Wang; Jiejun Wang; Jian He; Chuangui Wu; Wenbo Luo; Yao Shuai; Wanli Zhang; Chengkuo Lee. 2018. "Investigation of the Temperature Fluctuation of Single-Phase Fluid Based Microchannel Heat Sink." Sensors 18, no. 5: 1498.

Journal article
Published: 19 January 2018 in Sensors
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A micro-channel heat sink is a promising cooling method for high power integrated circuits (IC). However, the understanding of such a micro-channel device is not sufficient, because the tools for studying it are very limited. The details inside the micro-channels are not readily available. In this letter, a micro-channel heat sink is comprehensively studied using the integrated temperature sensors. The highly sensitive thin film temperature sensors can accurately monitor the temperature change in the micro-channel in real time. The outstanding heat dissipation performance of the micro-channel heat sink is proven in terms of maximum temperature, cooling speed and heat resistance. The temperature profile along the micro-channel is extracted, and even small temperature perturbations can be detected. The heat source formed temperature peak shifts towards the flow direction with the increasing flow rate. However, the temperature non-uniformity is independent of flow rate, but solely dependent on the heating power. Specific designs for minimizing the temperature non-uniformity are necessary. In addition, the experimental results from the integrated temperature sensors match the simulation results well. This can be used to directly verify the modeling results, helping to build a convincing simulation model. The integrated sensor could be a powerful tool for studying the micro-channel based heat sink.

ACS Style

Tao Wang; Jiejun Wang; Jian He; Chuangui Wu; Wenbo Luo; Yao Shuai; Wanli Zhang; Xiancai Chen; Jian Zhang; Jia Lin. A Comprehensive Study of a Micro-Channel Heat Sink Using Integrated Thin-Film Temperature Sensors. Sensors 2018, 18, 299 .

AMA Style

Tao Wang, Jiejun Wang, Jian He, Chuangui Wu, Wenbo Luo, Yao Shuai, Wanli Zhang, Xiancai Chen, Jian Zhang, Jia Lin. A Comprehensive Study of a Micro-Channel Heat Sink Using Integrated Thin-Film Temperature Sensors. Sensors. 2018; 18 (1):299.

Chicago/Turabian Style

Tao Wang; Jiejun Wang; Jian He; Chuangui Wu; Wenbo Luo; Yao Shuai; Wanli Zhang; Xiancai Chen; Jian Zhang; Jia Lin. 2018. "A Comprehensive Study of a Micro-Channel Heat Sink Using Integrated Thin-Film Temperature Sensors." Sensors 18, no. 1: 299.

Article
Published: 21 November 2017 in Journal of Materials Science: Materials in Electronics
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Lead magnesium niobate–lead titanate (PMN–PT) ceramic powder and Poly[VinyliDeneFluoride-co-TriFluoroEthylene] (P[VDF–TrFE]) have been used to fabricate 0–3 composites thick films on ITO substrates by tape casting. The phase structure and grain size of PMN–PT were analyzed by XRD and SEM. The distribution of ceramic powder in polymer matrix was characterized by SEM. In order to find out the optimal poling temperature, dielectric-temperature spectrums of the composite films were measured to calculate the electric field applied to the ceramic phase (Ec). Finally, PMN–PT/P[VDF–TrFE] composite films were polarized by one-step polarization under optimized polarization temperature and their pyroelectric constant were compared with these of samples poled using conventional two-step polarization method. The results showed that the pyroelectric coefficient increases to 58.6 μC m−2 K−1 at a ceramic mass fraction of 55% at the optimized polarizing temperature 110 °C.

ACS Style

W. B. Luo; L. G. Chen; J. Meng; Y. Shuai; C. G. Wu; X. Y. Sun; W. L. Zhang. Enhanced pyroelectric property of PMN–PT/P[VDF–TrFE] thick film by optimizing poling temperature. Journal of Materials Science: Materials in Electronics 2017, 29, 271 -276.

AMA Style

W. B. Luo, L. G. Chen, J. Meng, Y. Shuai, C. G. Wu, X. Y. Sun, W. L. Zhang. Enhanced pyroelectric property of PMN–PT/P[VDF–TrFE] thick film by optimizing poling temperature. Journal of Materials Science: Materials in Electronics. 2017; 29 (1):271-276.

Chicago/Turabian Style

W. B. Luo; L. G. Chen; J. Meng; Y. Shuai; C. G. Wu; X. Y. Sun; W. L. Zhang. 2017. "Enhanced pyroelectric property of PMN–PT/P[VDF–TrFE] thick film by optimizing poling temperature." Journal of Materials Science: Materials in Electronics 29, no. 1: 271-276.

Journal article
Published: 01 October 2016 in Thin Solid Films
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Forming free resistive switching property of TiO2 films deposited on Pt/Ti/SiO2/Si substrates was studied in this contribution. The surface morphology of TiO2 films were studied by atomic force microscopy (AFM). The chemic states of Ti and O elements were measured by X-ray photoelectron spectrum (XPS). The resistive switching property of the sample was measured using Au/TiO2/Pt capacitor structure fabricated by evaporating Au top electrode. Smooth surface and dense cross structure were observed by AFM and scanning electron microscopy. Oxygen vacancies in TiO2 film were confirmed by XPS. Forming free resistance switching was confirmed by the current–voltage measurement and the resistance ratio is larger than two orders of magnitude at 2.5 V. The XPS spectrum, asymmetric current loops and conduction mechanism fitting results indicated that the asymmetric electrode structure and oxygen vacancies are the origin of the resistive switching.

ACS Style

W.B. Luo; P. Zhang; Y. Shuai; X.Q. Pan; Q.Q. Wu; C.G. Wu; C. Yang; W.L. Zhang. Forming free resistive switching in Au/TiO2/Pt stack structure. Thin Solid Films 2016, 617, 63 -66.

AMA Style

W.B. Luo, P. Zhang, Y. Shuai, X.Q. Pan, Q.Q. Wu, C.G. Wu, C. Yang, W.L. Zhang. Forming free resistive switching in Au/TiO2/Pt stack structure. Thin Solid Films. 2016; 617 ():63-66.

Chicago/Turabian Style

W.B. Luo; P. Zhang; Y. Shuai; X.Q. Pan; Q.Q. Wu; C.G. Wu; C. Yang; W.L. Zhang. 2016. "Forming free resistive switching in Au/TiO2/Pt stack structure." Thin Solid Films 617, no. : 63-66.

Journal article
Published: 11 April 2016 in Nanomaterials
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The 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3(0.7PMN-0.3PT) nanorods were obtained via hydrothermal method with high yield (over 78%). Then, new piezoelectric nanocomposites based on (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT) nanorods were fabricated by dispersing the 0.7PMN-0.3PT nanorods into piezoelectric poly(vinylidene fluoride) (PVDF) polymer. The mechanical behaviors of the nanocomposites were investigated. The voltage and current generation of PMN-PT/PVDF nanocomposites were also measured. The results showed that the tensile strength, yield strength, and Young’s modulus of nanocomposites were enhanced as compared to that of the pure PVDF. The largest Young’s modulus of 1.71 GPa was found in the samples with 20 wt % nanorod content. The maximum output voltage of 10.3 V and output current of 46 nA were obtained in the samples with 20 wt % nanorod content, which was able to provide a 13-fold larger output voltage and a 4.5-fold larger output current than that of pure PVDF piezoelectric polymer. The current density of PMN-PT/PVDF nanocomposites is 20 nA/cm2. The PMN-PT/PVDF nanocomposites exhibited great potential for flexible self-powered sensing applications.

ACS Style

Chuan Li; Wenbo Luo; Xingzhao Liu; Dong Xu; Kai He. PMN-PT/PVDF Nanocomposite for High Output Nanogenerator Applications. Nanomaterials 2016, 6, 67 .

AMA Style

Chuan Li, Wenbo Luo, Xingzhao Liu, Dong Xu, Kai He. PMN-PT/PVDF Nanocomposite for High Output Nanogenerator Applications. Nanomaterials. 2016; 6 (4):67.

Chicago/Turabian Style

Chuan Li; Wenbo Luo; Xingzhao Liu; Dong Xu; Kai He. 2016. "PMN-PT/PVDF Nanocomposite for High Output Nanogenerator Applications." Nanomaterials 6, no. 4: 67.

Journal article
Published: 06 November 2015 in Journal of Materials Science: Materials in Electronics
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The effect of potassium-sodium niobate (KNN) powder sintering temperature on the structure and properties of the KNN/{poly(vinylidenefluoride-co-trifluoroethylene 70:30) [P(VDF-TrFE) 70:30]} composite thick films have been studied in this paper. KNN powders were sintered by solid-state reaction at different temperatures ranging from 750 to 900 °C. Then the KNN powders were used to fabricate composite thick films by casting the KNN/P(VDF-TrFE) suspension on to ITO substrates. The pyroelectric and dielectric properties of the composite thick films have been investigated systematically. It was found that sample made up of KNN ceramic powders sintered at 850 °C show optimal properties for pyroelectric appliance. The highest pyroelectric coefficient was 63 μCm−2/K and the highest detectivity figure-of-merit was 4.94 μPa1/2.

ACS Style

W. B. Luo; Y. C. Yu; Y. Shuai; X. Q. Pan; Q. Q. Wu; C. G. Wu; W. L. Zhang. Enhanced pyroelectric properties of lead free KNN/P(VDF-TrFE) composite film by optimizing KNN sintering temperature. Journal of Materials Science: Materials in Electronics 2015, 27, 2288 -2292.

AMA Style

W. B. Luo, Y. C. Yu, Y. Shuai, X. Q. Pan, Q. Q. Wu, C. G. Wu, W. L. Zhang. Enhanced pyroelectric properties of lead free KNN/P(VDF-TrFE) composite film by optimizing KNN sintering temperature. Journal of Materials Science: Materials in Electronics. 2015; 27 (3):2288-2292.

Chicago/Turabian Style

W. B. Luo; Y. C. Yu; Y. Shuai; X. Q. Pan; Q. Q. Wu; C. G. Wu; W. L. Zhang. 2015. "Enhanced pyroelectric properties of lead free KNN/P(VDF-TrFE) composite film by optimizing KNN sintering temperature." Journal of Materials Science: Materials in Electronics 27, no. 3: 2288-2292.

Journal article
Published: 28 October 2015 in Journal of Alloys and Compounds
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Single crystalline nanorod (Nr) is considered to be a promising candidate in many nano-electric devices due to its excellent electric properties. Here we report a method to fabricate 0.65(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN–PT) single crystalline Nr by controlling the hydrothermal synthesis temperature and reactive time. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been employed to investigate the morphology and crystal characteristics of the PMN–PT Nrs. It was confirmed that single crystalline PMN–PT Nrs have been fabricated under optimal synthesis condition. Finally, the ferroelectric properties of PMN–PT Nrs were measured, and the coercive field, remnant polarization and spontaneous polarization of the nanorods are 2.78 kV/mm, 17.08 μC/cm2 and 31.25 μC/cm2 respectively.

ACS Style

W.B. Luo; K. He; D. Xu; C. Li; X.Y. Bai; Y. Shuai; C.G. Wu; W.L. Zhang. Reactive temperature and growth time effects on the morphology of PMN–PT nanorods by hydrothermal synthesis. Journal of Alloys and Compounds 2015, 671, 122 -126.

AMA Style

W.B. Luo, K. He, D. Xu, C. Li, X.Y. Bai, Y. Shuai, C.G. Wu, W.L. Zhang. Reactive temperature and growth time effects on the morphology of PMN–PT nanorods by hydrothermal synthesis. Journal of Alloys and Compounds. 2015; 671 ():122-126.

Chicago/Turabian Style

W.B. Luo; K. He; D. Xu; C. Li; X.Y. Bai; Y. Shuai; C.G. Wu; W.L. Zhang. 2015. "Reactive temperature and growth time effects on the morphology of PMN–PT nanorods by hydrothermal synthesis." Journal of Alloys and Compounds 671, no. : 122-126.

Journal article
Published: 12 March 2015 in Sensors and Actuators A: Physical
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The effects of SiO2 aerogel film thickness on the properties of pyroelectric device were studied by ANSYS thermal simulation and infrared radiation test. At first, the temperature distributions of the pyroelectric devices with different thicknesses of SiO2 aerogel film were simulated by ANSYS. After that, aerogel films with thicknesses from 300 nm to 1000 nm were deposited on Si substrates by spin coating. Thermal conductivity of SiO2 aerogel film was 2.78 × 10−2 W/m K by 3ω method test. Films were utilized in our pyroelectric infrared detectors as thermal insulators. The detectivity (D*) of these detectors was measured by mechanically chopped blackbody radiation. The D* values was enhanced as the SiO2 aerogel film thickness increased from 300 nm to 800 nm, indicating the thermal isolation effects was improved. Detector with thermal insulation layer thickness of 780 nm possessed the greatest D* over the whole frequency range from 5.3 Hz to 133.3 Hz. The D* was above 7 × 107 cm Hz1/2 W−1 and reached the highest value of 9.7 × 107 cm Hz1/2 W−1, which represented a wide bandwidth of over 128 Hz. This result indicated that SiO2 aerogel film of 780 nm in thickness was a promising thermal isolation material for monolithic pyroelectric infrared detectors.

ACS Style

X.Y. Sun; W.B. Luo; J. Meng; X. Qing; W.Y. Fu; Y. Shuai; C.G. Wu. Monolithic pyroelectric infrared detectors using SiO2 aerogel thin films. Sensors and Actuators A: Physical 2015, 228, 69 -74.

AMA Style

X.Y. Sun, W.B. Luo, J. Meng, X. Qing, W.Y. Fu, Y. Shuai, C.G. Wu. Monolithic pyroelectric infrared detectors using SiO2 aerogel thin films. Sensors and Actuators A: Physical. 2015; 228 ():69-74.

Chicago/Turabian Style

X.Y. Sun; W.B. Luo; J. Meng; X. Qing; W.Y. Fu; Y. Shuai; C.G. Wu. 2015. "Monolithic pyroelectric infrared detectors using SiO2 aerogel thin films." Sensors and Actuators A: Physical 228, no. : 69-74.