This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique of focused electron-beam-induced deposition (FEBID) employing the precursor trimethylmethylcyclopentadienyl platinum [MeCpPt(Me)₃]. We use a cantilever-based deflection technique to determine the sensitivity (gauge factor) of the sensor element. We find that its sensitivity depends on the electrical conductivity and can be continuously tuned, either by the thickness of the deposit or by electron-beam irradiation leading to a distinct maximum in the sensitivity. This maximum finds a theoretical rationale in recent advances in the understanding of electronic charge transport in nano-granular metals.

Scanning probe microscopy (SPM) has become an essential surface characterization technique in research and development. By concept, SPM performance crucially depends on the quality of the nano-probe element, in particular, the apex radius. Now, with the development of advanced SPM modes beyond morphology mapping, new challenges have emerged regarding the design, morphology, function, and reliability of nano-probes. To tackle these challenges, versatile fabrication methods for precise nano-fabrication are needed. Aside from well-established technologies for SPM nano-probe fabrication, focused electron beam-induced deposition (FEBID) has become increasingly relevant in recent years, with the demonstration of controlled 3D nanoscale deposition and tailored deposit chemistry. Moreover, FEBID is compatible with practically any given surface morphology. In this review article, we introduce the technology, with a focus on the most relevant demands (shapes, feature size, materials and functionalities, substrate demands, and scalability), discuss the opportunities and challenges, and rationalize how those can be useful for advanced SPM applications. As will be shown, FEBID is an ideal tool for fabrication/modification and rapid prototyping of SPM-tipswith the potential to scale up industrially relevant manufacturing.

The pursuit of sculpting materials at increasingly smaller and deeper scales remains a persistent subject in the field of micro- and nanofabrication. Anisotropic deep-reactive ion etching of silicon at cryogenic temperatures (cryo-DRIE) was investigated for fabricating arrays of vertically aligned Si nanowires (NWs) of a large range of dimensions from micrometers down to 30 nm in diameter, combined with commonly used wafer-scale lithography techniques based on optical, electron-beam, nanoimprint, and nanosphere/colloidal masking. Large selectivity of ∼100 to 120 and almost 700 was found with resists and chromium hard masks, respectively. This remarkable selectivity enables the successful transfer of patterned geometries while preserving spatial resolution to a significant extent. Depending on the requirements by applications, various shapes, profiles, and aspect ratios were achieved by varying process parameters synchronously or asynchronously. High aspect ratios of up to 100 comparable to the best result by metal-assisted wet-chemical etching and sub-μm trenches by DRIE were obtained with NW diameter of 200 nm, at an etch rate of ∼4 μm/min without being collapsed. At the same time, low surface roughness values were maintained on the NW top, sidewall, and bottom surface of ∼0.3, ∼13, and ∼2 nm, respectively, as well as high pattern fidelity and integrity, which were measured using angle-resolved Fourier microscopy, combined atomic force, and scanning electron microscopy on selected NWs. This work establishes the foundation in the controllable development of Si nanoarchitectures, especially at sub-100 nm structures, for energy-harvesting and storage, damage-free optoelectronics, quantum, photovoltaics, and biomedical devices.

In this study, we investigate the performance of two piezoresistive micro-electro-mechanical system (MEMS)-based silicon cantilever sensors for measuring target analytes (i.e., ultrafine particulate matters). We use two different types of cantilevers with geometric dimensions of 1000 × 170 × 19.5 µm³ and 300 × 100 × 4 µm³, which refer to the 1st and 2nd types of cantilevers, respectively. For the first case, the cantilever is configured to detect the fundamental in-plane bending mode and is actuated using a resistive heater. Similarly, the second type of cantilever sensor is actuated using a meandering resistive heater (bimorph) and is designed for out-of-plane operation. We have successfully employed these two cantilevers to measure and monitor the changes of mass concentration of carbon nanoparticles in air, provided by atomizing suspensions of these nanoparticles into a sealed chamber, ranging from 0 to several tens of µg/m³ and oversize distributions from ~10 nm to ~350 nm. Here, we deploy both types of cantilever sensors and operate them simultaneously with a standard laboratory system (Fast Mobility Particle Sizer, FMPS, TSI 3091) as a reference.