Cerium (Ce)-doped Ni_0.5Cd_0.5Ce_xFe_2−xO₄ (0.0 ≤ x ≤ 0.20) was synthesized using the sol–gel auto-combustion method. X-ray diffraction (XRD) analysis revealed that all the samples retained spinel cubic crystal structure with space group Fd3m at 800 °C. Crystal structure parameters, such as lattice constant, average crystallite size, and X-ray density were estimated from the major XRD (311) peak. Bulk density and porosity were also calculated. The average crystallite size was estimated to be in the range of 20–24 nm. SEM images displayed agglomerated particles with a porous morphology. The dielectric constant (${\epsilon }^{\prime }$) increased and the dielectric loss tangent (tan$\mathsf{\delta }$) decreased with rising Ce concentration. The hysteresis loop (M–H loop) was measured at room temperature using a vibrating-sample magnetometer (VSM), which showed a nonlinear decrease in magnetization and coercivity with increasing Ce concentration.

Thin films of Cd_1−xMg_xO (CdMgO) (0 ≤ x ≤ 1) were investigated by depositing the films on glass substrates using the co-evaporation technique. The structural, surface morphological, optical, and electrical characteristics of these films were studied as a function of Mg content after annealing at 350 °C. The XRD analysis showed that the deposited films had an amorphous nature. The grain size of the films reduced as the Mg concentration increased, as evidenced by the surface morphology, and EDAX supported the existence of Mg content. It was observed that as the films were annealed, the transmittance of the CdMgO films saw an increase of up to 85%. The blue shift of the absorption edge was observed by the increase of Mg content, which was useful for enhancing the efficiency of solar cells. The optical band gap increased from 2.45 to 6.02 eV as the Mg content increased. With increased Mg content, the refractive index reduced from 2.49 to 1.735, and electrical resistivity increased from 535 Ω cm to 1.57 × 10⁶ Ω cm.

Multilayer CdZnS (CZS) thin film was deposited on soda lime glass substrates. After deposition, the films were vacuum and air annealed at 100 °C, 200 °C, 300 and 400 °C for 1 h. Effects of vacuum and air annealing on structural, morphological, optical, and electrical properties of multilayer CZS films with increasing annealing temperature (IAT) were studied. The structural analysis revealed that the films were polycrystalline with hexagonal structure having a prominent/intensive peak along the (002) plane at 300 and 400 °C. The crystallite size of nanoparticles increased from 18.4 to 20.5 nm under air annealing and from 18.4 to 26.9 nm under vacuum annealing, showing the significance of annealing on nanoparticle grain growth. According to morphological analysis, the multilayer technique provides homogeneous film distribution over the substrate. The transmittance graphs of films revealed that it increased up to 92% in the visible and NIR regions under vacuum annealing and up to 52% under air annealing. Vacuum annealing enhanced the band gap energies more significantly than air annealing. The electrical resistivity increased with IAT, showing that structural, morphological, optical, and electrical properties of the multilayer thin films of CZS were strongly dependent on vacuum and air annealing.