Cerium (Ce)-doped Ni_0.5Cd_0.5Ce_xFe_2−xO₄ (0.0 ≤ x ≤ 0.20) was synthesized using the sol–gel auto-combustion method. X-ray diffraction (XRD) analysis revealed that all the samples retained spinel cubic crystal structure with space group Fd3m at 800 °C. Crystal structure parameters, such as lattice constant, average crystallite size, and X-ray density were estimated from the major XRD (311) peak. Bulk density and porosity were also calculated. The average crystallite size was estimated to be in the range of 20–24 nm. SEM images displayed agglomerated particles with a porous morphology. The dielectric constant (${\epsilon }^{\prime }$) increased and the dielectric loss tangent (tan$\mathsf{\delta }$) decreased with rising Ce concentration. The hysteresis loop (M–H loop) was measured at room temperature using a vibrating-sample magnetometer (VSM), which showed a nonlinear decrease in magnetization and coercivity with increasing Ce concentration.

This work reports synthesis, thin film characterizations, and study of an organic semiconductor 2-aminoanthraquinone (AAq) for humidity and temperature sensing applications. The morphological and phase studies of AAq thin films are carried out by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD) analysis. To study the sensing properties of AAq, a surface type Au/AAq/Au sensor is fabricated by thermally depositing a 60 nm layer of AAq at a pressure of ~10⁻⁵ mbar on a pre-patterned gold (Au) electrodes with inter-electrode gap of 45 µm. To measure sensing capability of the Au/AAq/Au device, the variations in its capacitance and resistance are studied as a function of humidity and temperature. The Au/AAq/Au device measures and exhibits a linear change in capacitance and resistance when relative humidity (%RH) and temperature are varied. The AAq is a hydrophobic material which makes it one of the best candidates to be used as an active material in humidity sensors; on the other hand, its high melting point (575 K) is another appealing property that enables it for its potential applications in temperature sensors.

Thin films of Cd_1−xMg_xO (CdMgO) (0 ≤ x ≤ 1) were investigated by depositing the films on glass substrates using the co-evaporation technique. The structural, surface morphological, optical, and electrical characteristics of these films were studied as a function of Mg content after annealing at 350 °C. The XRD analysis showed that the deposited films had an amorphous nature. The grain size of the films reduced as the Mg concentration increased, as evidenced by the surface morphology, and EDAX supported the existence of Mg content. It was observed that as the films were annealed, the transmittance of the CdMgO films saw an increase of up to 85%. The blue shift of the absorption edge was observed by the increase of Mg content, which was useful for enhancing the efficiency of solar cells. The optical band gap increased from 2.45 to 6.02 eV as the Mg content increased. With increased Mg content, the refractive index reduced from 2.49 to 1.735, and electrical resistivity increased from 535 Ω cm to 1.57 × 10⁶ Ω cm.

Frequency and temperature dependence of the hysteresis loops (both major and minor hysteresis loops) of well-known materials such as pure Fe and pure Ni in the as-cast state and after a heat treatment, were measured and analyzed. Furthermore temperature dependent magnetostriction of the as-cast and annealed Ni sample were measured and residual stresses were estimated by assuming the magnetoelastic energy as the origin of coercivity H _c. The hysteresis measurements were made on fully automized hysteresigraph which is handled by a labview program. The system works with ring- or frame-shaped samples in the frequency range from 0.1 Hz to 2 kHz and in the temperature range from −77 K to 493 K.