Seungjun Lee

Mr. Seungjun Lee


Research Focus & Metrics

Academic Career Length

6Years (2021-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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21 August 2021 in Sensors
Verified
Journal Article
Open access
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SLSeungjun Lee
Seungjun Lee
JJJoohwan Jin
Joohwan Jin
JBJihyun Baek
Jihyun Baek
JLJuyong Lee
Juyong Lee
HCHyungil Chae
Hyungil Chae
This paper presents a small-sized, low-power gas sensor system combining a high-electron-mobility transistor (HEMT) device and readout integrated circuit (ROIC). Using a semiconductor-based HEMT as a gas-sensing device, it is possible to secure high sensitivity, reduced complexity, low power, and small size of the ROIC sensor system. Unlike existing gas sensors comprising only HEMT elements, the proposed sensor system has both an ROIC and a digital controller and can control sensor operation through a simple calibration process with digital signal processing while maintaining constant performance despite variations. The ROIC mainly consists of a transimpedance amplifier (TIA), a negative-voltage generator, and an analog-to-digital converter (ADC) and is designed to match a minimum target detection unit of 1 ppm for hydrogen. The prototype ROIC for the HEMT presented herein was implemented in a 0.18 µm complementary metal–oxide–semiconductor (CMOS) process. The total measured power consumption and detection unit of the proposed ROIC for hydrogen gas were 3.1 mW and 2.6 ppm, respectively.

28 September 2023 in IEEE Transactions on Circuits and Systems II: Express Briefs
Verified
Journal Article
Closed access
DLDongsik Lee
Dongsik Lee
SLSeungjun Lee
Seungjun Lee
HCHyungil Chae
Hyungil Chae
A fully passive bandpass (BP) noise-shaping (NS) successive approximation register (SAR) analog-to-digital converter (ADC) operating at a sampling rate of 150 MS/s is proposed. The proposed ADC structure is acquired by applying z to -z2 transformation to a fully passive lowpass (LP) NS-SAR ADC structure. Therefore, the proposed BP NS-SAR ADC inherits most of the advantages of the existing NS-SAR ADCs and achieves high energy efficiency and hardware simplicity. The prototype ADC was fabricated in a 28-nm CMOS process and achieved a signal-to-noise-distortion of 65.44 dB with a bandwidth of 18.75 MHz. The power consumption is 2.184mW and the Schreier figure-of-merit is 164.8 dB.

15 August 2021 in Electronics
Verified
Journal Article
Open access
PDF file
JLJuyong Lee
Juyong Lee
SLSeungjun Lee
Seungjun Lee
KKKihyun Kim
Kihyun Kim
HCHyungil Chae
Hyungil Chae
In this study, a pipelined noise-shaping successive-approximation register analog-to-digital converter (PLNS-SAR ADC) structure was proposed to achieve high resolution and to be free from comparator design requirements. The inter-stage amplifier and integrator of the PLNS-SAR ADC were implemented through a ring amplifier with high gain and speed. The ring amplifier was designed to improve power efficiency and be tolerant to process–voltage–temperature (PVT) variation, and uses a single loop common-mode feedback (CMFB) circuit. By processing residual signals with a single ring amplifier, power efficiency can be maximized, and a low-power system with 30% lower power consumption than that of a conventional PLNS-SAR ADC is implemented. With a high-gain ring amplifier, noise leakage is greatly suppressed, and a structure can be implemented that is tolerant of mismatches between the analog loop and digital correction filters. The measured signal to noise distortion ratio (SNDR) is 70 dB for a 5.15 MHz bandwidth (BW) at a 72 MS/s sampling rate (Fs) with an oversampling ratio (OSR) of 7, and the power consumption is 2.4 mW. The FoMS,SNDR  (= SNDR + 10log10BW/Power) is 163.5 dB. The proposed structure in this study can achieve high resolution and wide BW with good power efficiency, without a filter calibration process, through the use of a ring amplifier in the PLNS-SAR ADC.