Zinc gallate (ZnGa₂O₄) spinel ceramics doped with Mn²⁺ ions was prepared by a solid-state reaction at 1200 °C in air. Manganese concentration was equal to 0.05 mol.% of MnO with respect to ZnO. Ceramics produced in this way show an efficient green emission at about 505 nm under UV or X-ray excitations, which is caused by Mn²⁺ ions. This green emission is observed also as a relatively long afterglow (visible to the naked eye in the dark for about one hour) after switching-off the X-ray excitation. Time profiles of the beginning of glow and afterglow have been studied together with thermally stimulated (TSL) and optically stimulated (OSL) luminescence. Experimental results demonstrate a presence of few types of shallow and deep traps responsible for the observed afterglow and TSL/OSL emission of the material. The possibility of pulsed optical stimulation and time-resolved OSL characteristics of ZnGa₂O₄: Mn²⁺ has been reported for the first time. The presented results suggest the ZnGa₂O₄: Mn²⁺ spinel as a promising material for further fundamental research and possibility of application as a green long-lasting phosphor or storage phosphor for TSL/OSL radiation dosimetry.

This article considers the effect of MoO₃ and SiO additives in telluride glasses on the shielding characteristics and protection of electronic microcircuits operating under conditions of increased radiation background or cosmic radiation. MoO₃ and SiO dopants were chosen because their properties, including their insulating characteristics, make it possible to avoid breakdown processes caused by radiation damage. The relevance of the study consists in the proposed method of using protective glasses to protect the most important components of electronic circuits from the negative effects of ionizing radiation, which can cause failures or lead to destabilization of the electronics. Evaluation of the shielding efficiency of gamma and electron radiation was carried out using a standard method for determining the change in the threshold voltage (∆U) value of microcircuits placed behind the shield and subjected to irradiation with various doses. It was established that an increase in the content of MoO₃ and SiO in the glass structure led to an increase of up to 90% in the gamma radiation shielding efficiency, while maintaining the stability of microcircuit performance under prolonged exposure to ionizing radiation. The results obtained allow us to conclude that the use of protective glasses based on TeO₂–WO₃–Bi₂O₃–MoO₃–SiO is highly promising for creating local protection for the main components of microcircuits and semiconductor devices operating under conditions of increased background radiation or cosmic radiation.