The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed.

In this paper, a novel structure of multilayer organic photovoltaic cell has been designed and simulated. The integration of Poly(3-hexylthiophene-2,5-diyl) (P3HT) buffer layer and Poly(9,9-bis(3’-(N,N-dimethyl) N- ethylammoinium propyl-2,7-fluorene)-alt-2,7-(9,9 dioctyl fluorene)) dibromide (PFN:BR) electron transport layer (ETL) in the proposed solar cell has improved the performance significantly. The various performance measuring parameters like power conversion efficiency (PCE), short circuit current (Jsc), open circuit voltage (Voc), fill factor (FF), quantum efficiency (QE) have improved significantly. Furthermore, the effect of different layer thickness, the density of traps $N_{t}$ and temperature on the proposed solar cell has been studied and the optimum value has been obtained. It has been observed that after optimizing the different parameters of the proposed structure, the performance measuring parameters shows an improvement of 14%, 33.3%, 200% and 300% in Voc FF, Jsc and PCE respectively over the reported organic solar cells. Further, a QE of about 90% is achieved in the proposed structure.

In this work, we propose a novel Gate and Drain Engineered Schottky Barrier (SB) FET (GDE-SBFET) for biosensing application with significant sensitivity improvement. Two different gate materials are employed by the proposed SB device having work functions of 3.9 eV (Al) and 4.72 eV (Cu) and electrostatically doped drain (work function of 3.9 eV). Etching out the oxide on both sides of the gate creates a nano-gap cavity that is used to detect the biomolecule. The biomolecule electrical characteristics such as charge density and dielectric constant can modify the SB on either side of the gate, which can alter the device‘s driving current. The Drain Current sensitivity ( S_drain ) parameter are extensively analyzed at V_DS = V_GS = 0.5V and a comparison between state of the art devices and conventional devices has been carried out. From the obtained results, it can be concluded that proposed device sensitivity is much superior for negatively charged and neutral biomolecules (maximum of 460 for biomolecules with negative charge, maximum of 128 for neutral biomolecule and maximum of 35 for positively charged biomolecules, at K=12). These are the highest values of sensitivity observed for SB-FETs.

Lately, wearable applications featuring photonic on-chip sensors are on the rise. Among many ways of controlling and/or modulating, the acousto-optic technique is seen to be a popular technique. This paper undertakes the study of different multilayer structures that can be fabricated for realizing an acousto-optic device, the objective being to obtain a high acousto-optic figure of merit (AOFM). By varying the thicknesses of the layers of these materials, several properties are discussed. The study shows that the multilayer thin film structure-based devices can give a high value of electromechanical coupling coefficient (k²) and a high AOFM as compared to the bulk piezoelectric/optical materials. The study is conducted to find the optimal normalised thickness of the multilayer structures with a material possessing the best optical and piezoelectric properties for fabricating acousto-optic devices. Based on simulations and studies of SAW propagation characteristics such as the electromechanical coupling coefficient (k²) and phase velocity (v), the acousto-optic figure of merit is calculated. The maximum value of the acousto-optic figure of merit achieved is higher than the AOFM of all the individual materials used in these layer structures. The suggested SAW device has potential application in wearable and small footprint acousto-optic devices and gives better results than those made with bulk piezoelectric materials.