For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors. This paper presents column-parallel high-gain signal readout circuits, correlated multiple sampling (CMS) circuits and their noise reduction effects. In the CMS, the gain of the noise cancelling is controlled by the number of samplings. It has a similar effect to that of an amplified CDS for the thermal noise but is a little more effective for 1/f and RTS noises. Two types of the CMS with simple integration and folding integration are proposed. In the folding integration, the output signal swing is suppressed by a negative feedback using a comparator and one-bit D-to-A converter. The CMS circuit using the folding integration technique allows to realize a very low-noise level while maintaining a wide dynamic range. The noise reduction effects of their circuits have been investigated with a noise analysis and an implementation of a 1Mpixel pinned photodiode CMOS image sensor. Using 16 samplings, dynamic range of 59.4 dB and noise level of 1.9 e^- for the simple integration CMS and 75 dB and 2.2 e^- for the folding integration CMS, respectively, are obtained.

A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented.

Ultrasensitive, rapid and selective diagnostic probes are urgently needed to overcome the limitations of traditional probes for norovirus (NV). Here, we report the detection of NV genogroup II via nucleic acid hybridization technology using a quantum dot (QD)-conjugated molecular beacon (MB) probe. To boost the sensitivity of the MB assay system, an ultrasensitive QD fluorophore with unique optical properties was synthesized, characterized and exploited as a fluorescence signal generator. Alloyed thioglycolic (TGA)-capped CdZnSeS QDs with a high photoluminescence (PL) quantum yield (QY) value of 92% were synthesized, and a modified silanization method was employed to encapsulate the thiol-capped QDs in a silica layer. The resulting highly luminescent alloyed SiO2-coated CdZnSeS QDs had a remarkable PL QY value of 98%. Transmission electron microscopy and dynamic light scattering confirmed the monodispersity of the alloyed nanocrystals, and zeta potential analysis confirmed their colloidal stability. Powder X-ray diffraction and PL lifetime measurements confirmed the surface modification of the QDs. The alloyed TGA-capped and SiO2-coated CdZnSeS QD-conjugated MB bioprobes detected extremely low concentrations of NV RNA. Ultrasensitive detection of low concentrations of NV RNA with a limit of detection (LOD) of 8.2copies/mL in human serum and a LOD of 9.3 copies/mL in buffer was achieved using the SiO2-coated CdZnSeS QD-MB probes, an increase in sensitivity of 3-fold compared with the detection limit for NV RNA using TGA-capped CdZnSeS QD-MBs. The additional merits of our detection system are rapidity, specificity and improved sensitivity over conventional molecular test probes.

An 8-tap CMOS lock-in pixel image sensor that has seven carrier-capturing and a draining time window was developed for short-pulse time-of-flight (TOF) measurements. The proposed pixel for the short-pulse TOF measurements has seven consecutive time-gating windows, each of which has the width of 6 ns, which is advantageous for high-resolution range imaging, particularly for relatively longer distances (>5 m) and under high ambient light operations. In order to enhance the depth resolution, a technique for the depth-adaptive time-gating-number assignment (DATA) for the short-pulse TOF measurement is proposed. A prototype of the 8-tap CMOS lock-in pixel image sensor is implemented with a 1POLY 4METAL 0.11-μm CIS process. The maximum non-linearity error of 1.56%FS for the range of 1–6.4 m and the depth resolution of 6.4 mm was obtained at 6.2 m using the DATA technique.

Controlling and engineering the particle composition of semiconductor alloys is one of the topmost targets in the field of semiconductor materials science and technology. Quantum dot (QD) nanocrystals offer an unmatched opportunity to obtain a wide range of composition-controlled alloys and have captivated a great deal of interest recently. Herein, we report on band gap engineering via tuning and controlling the sulphur molar fraction (ternary shell layer) of quaternary/ternary core/shell alloyed CdZnSeS/ZnSeS QDs. Varying optical properties were exhibited by the alloyed QDs but a uniform particle size distribution was maintained across all the compositions. The alloyed QDs displayed bright emission colours under UV irradiation, whereas the photoluminescence quantum yields (PL QY) were in a remarkable range of 36–98%. Non-linearity of the lattice parameter was an indication of gradient alloying of the nanocrystals, whereas the kinetics of the optical properties unravelled the effect of intrinsic optical bowing. Displacement of bond length and anion mismatch influenced the optical properties of the QDs with respect to the variation in the PL QY. Alloyed CdZnSeS/ZnSe_1.0S_1.3 QDs with a spectacular PL QY were exploited as an ultrasensitive fluorescence reporter in a conjugated molecular beacon (MB) assay to detect influenza virus H1N1 RNA. Our detection system was rapid and highly sensitive for detecting extremely low concentrations of H1N1 RNA (down to 2 copies per mL), specific and versatile (detects H1N1 RNA in human serum). For proof of concept, the alloyed CdZnSeS/ZnSe_1.0S_1.3 QD-MB bioprobe exhibited a superior 12-fold sensitivity over an alloyed CdZnSeS-MB probe, while a conventional CdSe/ZnS-MB probe could not detect extremely low concentrations of influenza virus H1N1 RNA.

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.