We propose and experimentally demonstrate a high-efficiency single-pixel imaging (SPI) scheme by integrating time-correlated single-photon counting (TCSPC) with time-division multiplexing to acquire full-color images at an extremely low light level. This SPI scheme uses a digital micromirror device to modulate a sequence of laser pulses with preset delays to achieve three-color structured illumination, then employs a photomultiplier tube into the TCSPC module to achieve photon-counting detection. By exploiting the time-resolved capabilities of TCSPC, we demodulate the spectrum-image-encoded signals, and then reconstruct high-quality full-color images in a single round of measurement. Based on this scheme, strategies such as single-step measurement, high-speed projection, and undersampling can further improve imaging efficiency.

We investigate the optical properties of InGaAs surface quantum dots (SQDs) in a composite nanostructure with a layer of similarly grown buried quantum dots (BQDs) separated by a thick GaAs spacer, but with varied areal densities of SQDs controlled by using different growth temperatures. Such SQDs behave differently from the BQDs, depending on the surface morphology. Dedicated photoluminescence (PL) measurements for the SQDs grown at 505 °C reveal that the SQD emission follows different relaxation channels while exhibiting abnormal thermal quenching. The PL intensity ratio between the SQDs and BQDs demonstrates interplay between excitation intensity and temperature. These observations suggest a strong dependence on the surface for carrier dynamics of the SQDs, depending on the temperature and excitation intensity.

For photovoltaic effect (PE), both barrier height and carrier lifetime are all very important factors. However, how to distinguish their contributions to the PE is very difficult. In this paper, we prepared a series of GaAs/Al_0.3Ga_0.7As two dimensional electron gas (2DEG) with typical Al_0.3Ga_0.7As doping concentration of 0.6 × 10¹⁸/cm³, 1.2 × 10¹⁸/cm³, and 2.5 × 10¹⁸/cm³, respectively (sample number: #1, #2, #3), and studied their lateral photovoltaic effects (LPEs). It is found that their position sensitivities all increase with both laser wavelength and laser power. However, the position sensitivity exhibits a non-monotonic behavior with increasing doping concentration, which can be mainly ascribed to the doping concentration-dependent carrier lifetime, especially in the low power regime. With increasing laser power gradually, the position sensitivity difference between sample #1 and sample #2 is still large and increases a little, while the position sensitivity of sample #3 approaches to that of sample #2, suggesting that the doping concentration-dependent barrier height also starts to play an important role in the high power regime. Our results will provide important information for the design and development of novel and multifunctional PE devices.