A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.
12 October 2020 in ACS Applied Materials & Interfaces
A dual-mode, sensitive β-Ga2O3 MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 1011 Jones.
Nitrogen-doping in Ga2O3 films is proposed to decrease the concentration of oxygen vacancies and further improve the performance of solar-blind ultraviolet photodetectors.
24 September 2021 in Journal of Materials Chemistry C