Narrow linewidth external cavity semiconductor lasers (NLECSLs) have many important applications, such as spectroscopy, metrology, biomedicine, holography, space laser communication, laser lidar and coherent detection, etc. Due to their high coherence, low phase-frequency noise, high monochromaticity and wide wavelength tuning potential, NLECSLs have attracted much attention for their merits. In this paper, three main device structures for achieving NLECSLs are reviewed and compared in detail, such as free space bulk diffraction grating external cavity structure, waveguide external cavity structure and confocal Fabry–Perot cavity structure of NLECSLs. The Littrow structure and Littman structure of NLECSLs are introduced from the free space bulk diffraction grating external cavity structure of NLECSLs. The fiber Bragg grating external cavity structure and silicon based waveguide external cavity structure of NLECSLs are introduced from the waveguide external cavity structure of NLECSLs. The results show that the confocal Fabry–Perot cavity structure of NLECSLs is a potential way to realize a lower than tens Hz narrow linewidth laser output.

In this paper, we review the progress of wide tunable Bragg grating external cavity semiconductor lasers (BG-ECSLs). We concentrate on BG-ECSLs based on the wide tunable range for multicomponent detection. Wide tunable BG-ECSLs have many important applications, such as wavelength-division multiplexing (WDM) systems, coherent optical communications, gas detection and atom cooling. Wide tunability, narrow linewidth and a high side-mode suppression ratio BG-ECSLs have attracted much attention for their merits. In this paper, three main structures for achieving widely tunable, narrow linewidth, high side-mode suppression ratio BG-ECSLs are reviewed and compared in detail, such as the volume Bragg grating (VBG) structure, fiber Bragg grating (FBG) structure and waveguide Bragg grating (WBG) structure of ECSLs. The advantages and disadvantages of different structures of BG-ECSLs are analyzed. The results show that WBG-ECSLs are a potential way to realize the integration, small size, wide tuning range, stable spectral output and high side-mode suppression ratio laser output. Therefore, the use of WBG as optical feedback elements is still the mainstream direction of BG-ECSLs, and BG-ECSLs offer a further new option for multicomponent detection and multi-atoms cooling.

In this paper, we review the progress of the development and application of external cavity quantum cascade lasers (ECQCLs). We concentrated on ECQCLs based on the wide tunable range for multi-component detection and applications. ECQCLs in the mid-infrared band have a series of unique spectral properties, which can be widely used in spectroscopy, gas detection, protein detection, medical diagnosis, free space optical communication, and so on, especially wide tuning range, the tuning range up to hundreds of wavenumbers; therefore, ECQCLs show great applications potential in many fields. In this paper, the main external cavity structures of ECQCLs are reviewed and compared, such as the Littrow structure, the Littman structure, and some new structures. Some new structures include the intra-cavity out-coupling structure, multimode interference (MMI) structure, and acousto-optic modulator (AOM) control structure. At the same time, the application research of ECQCLs in gas detection, protein detection, and industry detection are introduced in detail. The results show that the use of diffraction gratings as optical feedback elements can not only achieve wide tuning, but it also has low cost, which is beneficial to reduce the complexity of the laser structure. Therefore, the use of diffraction gratings as optical feedback elements is still the mainstream direction of ECQCLs, and ECQCLs offer a further new option for multi-component detection.

Widely tunable, narrow linewidth external cavity lasers on silicon substrates have many important applications, such as white-light interferometry, wavelength division multiplexing systems, coherent optical communication, and optical fiber sensor technology. Wide tuning range, high laser output power, single mode, stable spectral output, and high side-mode suppression ratio external cavity lasers have attracted much attention for their merits. In this paper, two main device-integrated structures for achieving widely tunable, narrow linewidth external cavity lasers on silicon substrates are reviewed and compared in detail, such as MRR-integrated structure and MRR-and-MZI-integrated structure of external cavity semiconductor lasers. Then, the chip-integrated structures are briefly introduced from the integration mode, such as monolithic integrated, heterogeneous integrated, and hybrid integrated. Results show that the silicon-substrate-integrated external cavity lasers are a potential way to realize a wide tuning range, high power, single mode, stable spectral output, and high side-mode suppression ratio laser output.

Narrow-linewidth broadband tunable external cavity diode lasers (NBTECDLs), with their broadband tuning range, narrow linewidth, high side-mode suppression ratio (SMSR), and high output power, have become important laser sources in many fields such as optical communication, spectral analysis, wavelength division multiplexing systems, coherent detection, and ultra-high-speed optical interconnection. This paper briefly describes the basic theory of NBTECDLs, introduces NBTECDLs with diffraction grating type, fiber Bragg grating (FBG) type, and waveguide type, and conducts an in-depth analysis on the working principles and performance characteristics of NBTECDLs based on different NBTECDL types. Then, it reviews the latest research progress on Littrow-type, Littman-type, FBG-type, and waveguide-type NBTECDLs in detail and compares and summarizes the characteristics of Littrow-type NBTECDLs, Littman-type NBTECDLs, FBG-type NBTECDLs, and waveguide-type NBTECDLs. Finally, it looks at the structural features, key technologies, optical performance, and application fields of the most cutting-edge research in recent years and summarizes the challenges and future development directions of NBTECDLs.

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.