A mixed-signal spiking neural network (SNN) chip is presented, and its radiation effect-Total Ionizing Dose (TID) was studied. The chip was fabricated in a 180 nm silicon-on-insulator (SOI) integration process with an area of 3.75 mm²; the total doses were set at 300 krad (Si), 500 krad (Si), and 1 Mrad (Si). The TID radiation experimental results showed that the average spike frequency and spike amplitude of the output signal of the SNN circuit decreased after the irradiation because of the leakage current caused by the charge trapped in the buried oxide. Sensitive nodes were identified through the analysis of the critical path of the circuit, and guidance toward a radiation-hardening neuron circuit was proposed. The proposed circuit maintains good robustness with firing frequency variation.