In this study, we developed a radial artery pulse acquisition system based on finger-worn dense pressure sensor arrays to enable three-dimensional pulse signals acquisition. The finger-worn dense pressure-sensor arrays were fabricated by packaging 18 ultra-small MEMS pressure sensors (0.4 mm × 0.4 mm × 0.2 mm each) with a pitch of 0.65 mm on flexible printed circuit boards. Pulse signals are measured and recorded simultaneously when traditional Chinese medicine practitioners wear the arrays on the fingers while palpating the radial pulse. Given that the pitches are much smaller than the diameter of the human radial artery, three-dimensional pulse envelope images can be measured with the system, as can the width and the dynamic width of the pulse signals. Furthermore, the array has an effective span of 11.6 mm—3–5 times the diameter of the radial artery—which enables easy and accurate positioning of the sensor array on the radial artery. This study also outlines proposed methods for measuring the pulse width and dynamic pulse width. The dynamic pulse widths of three volunteers were measured, and the dynamic pulse width measurements were consistent with those obtained by color Doppler ultrasound. The pulse wave velocity can also be measured with the system by measuring the pulse transit time between the pulse signals at the brachial and radial arteries using the finger-worn sensor arrays.

Combined use of thermal analysis techniques can realize complementarity of different characterization methods. Comprehensive thermal analysis with both thermogravimetric analysis and differential thermal analysis (TG/DTA) can measure not only mass change of a sample but also its temperature change during programmed heating-induced reaction or phase transition processes, thereby obtaining multiaspect thermal information of the material such as dehydration, structural decomposition, phase change and thermal stability. This study proposes and develops a MEMS chip-based TG/DTA microsystem that integrates both programmed heating and detecting elements into a TG chip and a DTA chip to enable the microinstrument performing TG/DTA joint characterization under microscope observation. The TG chip contains a self-heating resonant microcantilever to measure heating-induced mass change of a sample and the DTA chip is with a microheater and a temperature-detecting thermopile integrated on a suspended thermal-insulating diaphragm. Only nanogram and microgram-level samples are needed for the TG and DTA chips, thereby achieving safe measurement to energetic materials such as strong oxidants. The chip-based microinstrument surpasses the state-of-the-art commercial TG/DTA instruments that have, in the long term, suffered from large sample-amount (milligram level) requirements and have been unable to measure energetic materials. Compared with commercial instruments, the chip-based microinstrument is advantageous given its more accurate analysis, much higher heating rate, much smaller instrument volume and much lower power consumption, etc. The microinstrument has been fabricated by using wafer-level MEMS techniques. Testing results show that the mass-detection sensitivity of the TG-chip is as high as 0.45 Hz/pg in air and the temperature sensitivity of the DTA chip achieves 2.9 mV/K under the high heating rate of 25 °C/s. The strong oxidant of KMnO₄ is analyzed with the TG/DTA joint characterization under microscopic observation. At the same time as microscope observation of the thermal decomposition phenomena, two-step thermal decomposition process of KMnO₄ is identified and the thermal decomposition temperatures are obtained. The TG/DTA microinstrument is promising to be applied for study of various materials.

Temperature can reflect vital activities, and researchers have attempted to guide Chinese medicine diagnosis and treatment by observing acupoint temperature changes. Integrating a temperature sensor at the needle tip enables in situ acupoint temperature measurement. However, the sensor needles for acupoint temperature monitoring designed in previous studies were fabricated by manually soldering thermistor beads and metal wires, making mass production difficult. In this work, using MEMS manufacturing technology, a flexible temperature sensor that can be integrated at the needle tip is proposed and can be mass-produced on silicon wafers. The sensor uses a Pt thermistor as the temperature-sensing element and has a slender flexible structure with dimensions of 125 μm width by 3.2 cm length. As the sensor is inserted into a hollow needle, the Pt thermistor is glued to the needle tip. In the temperature range of 30 °C to 50 °C, the fabricated temperature sensor has a sensitivity of 5.00 Ω∙°C⁻¹, a nonlinearity of ±0.39%FS, and a repeatability error of ±2.62%FS. Additionally, the sensor has been applied to in vivo acupoint temperature monitoring experiments in rats and demonstrated good performance, suggesting its promise for future research on acupoint temperature.

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.

This study reports an oven-controlled microelectromechanical systems oscillator with integrated micro-evaporation trimming that achieves frequency stability over the industrial temperature range and permanent frequency trimming after vacuum packaging. The length-extensional-mode resonator is micro-oven controlled and doped degenerately with phosphorous to achieve a frequency instability of ±2.6 parts per million (ppm) in a temperature range of −40 to 85 °C. The micro-evaporators are bonded to the resonator, integrated face-to-face, and encapsulated in vacuum. During trimming, the micro-evaporators are heated electrically, and the aluminum layers on their surfaces are evaporated and deposited on the surface of the resonator that trims the resonant frequency of the resonator permanently. The impact of the frequency trimming on the temperature stability is very small. The temperature drift increases from ±2.6 ppm within the industrial temperature range before trimming to ±3.3 ppm after a permanent trimming of −426 ppm based on the local evaporation of Al. The trimming rate can be controlled by electric power. A resonator is coarse-trimmed by approximately −807 ppm with an evaporation power of 960 mW for 0.5 h, and fine-trimmed by approximately −815 ppm with an evaporation power of 456 mW for 1 h. Though the Q-factor decreases after trimming, a Q-factor of 304,240 is achieved after the trimming of −1442 ppm.

This paper presents an ultra-small absolute pressure sensor with a silicon-micromachined TSV backside interconnection for high-performance, high spatial resolution contact pressure sensing, including flexible-substrate applications. By exploiting silicon-micromachined TSVs that are compatibly fabricated with the pressure sensor, the sensing signals are emitted from the chip backside, thereby eliminating the fragile leads on the front-side. Such a design achieves a flat and fully passivated top surface to protect the sensor from mechanical damage, for reliable direct-contact pressure sensing. A single-crystal silicon beam–island structure is designed to reduce the deflection of the pressure-sensing diaphragm and improve output linearity. Using our group-developed microholes interetch and sealing (MIS) micromachining technique, we fabricated ultra-small piezoresistive pressure sensors with the chip size as small as 0.4 mm × 0.6 mm, in which the polysilicon-micromachined TSVs transfer the signal interconnection from the front-side to the backside of the wafer, and the sensor chips can be densely packaged on the flexible substrate via the TSVs. The ultra-small pressure sensor has high sensitivity of 0.84 mV/kPa under 3.3 V of supply voltage and low nonlinearity of ±0.09% full scale (FS) in the measurement range of 120 kPa. The proposed pressure sensors with backside-interconnection TSVs hold promise for tactile sensing applications, including flexible sensing of wearable wristwatches.