Graphene-based metamaterials have been widely applied in optoelectronic devices, optical modulators, and chemical sensors due to the outstanding tunability and optical response in the terahertz (THz) region. Here, tunable THz metamaterial absorbers based on patterned graphene are designed, fabricated, and modulated. The proposed metamaterial absorbers are constructed by the top layer of patterned graphene arrays and the aluminum (Al) film separated by polyimide (PI). The different THz absorption spectra can be acquired by changing the patterns of graphene. In order to verify the simulation results, a series of tests were conducted by THz time-domain spectrometer (THz-TDS) systems. The proposed absorbers are able to be insensitive to the angle of the incident wave. Besides, chemical doping is applied to turn the Fermi level of graphene and the absorption performance is promoted with the increase of the Fermi level. The experimental results have been demonstrated to have associated resonant peaks with the simulation results. The aim of this paper is to exhibit a systematic study on graphene-based THz metamaterial absorbers, including the simulation and experiments. By comparing the simulation and experimental results, it is useful to clarify the relevant theories and manufacturing processes. The work will provide a further step in the development of high-performance terahertz devices, including tunable absorbers, sensors, and electro-optic switches.

The substrate impurities scattering will lead to unstable temperature-sensitive behavior and poor linearity in graphene temperature sensors. And this can be weakened by suspending the graphene structure. Herein, we report a graphene temperature sensing structure, with suspended graphene membranes fabricated on the cavity and non-cavity SiO₂/Si substrate, using monolayer, few-layer, and multilayer graphene. The results show that the sensor provides direct electrical readout from temperature to resistance transduction by the nano piezoresistive effect in graphene. And the cavity structure can weaken the substrate impurity scattering and thermal resistance effect, which results in better sensitivity and wide-range temperature sensing. In addition, monolayer graphene is almost no temperature sensitivity. And the few-layer graphene temperature sensitivity, lower than that of the multilayer graphene cavity structure (3.50%/°C), is 1.07%/°C. This work demonstrates that piezoresistive in suspended graphene membranes can effectively enhance the sensitivity and widen the temperature sensor range in NEMS temperature sensors.

Graphene nanostructures are widely perceived as a promising material for fundamental components; their high-performance electronic properties offer the potential for the construction of graphene nanoelectronics. Numerous researchers have paid attention to the fabrication of graphene nanostructures, based on both top-down and bottom-up approaches. However, there are still some unavoidable challenges, such as smooth edges, uniform films without folds, and accurate dimension and location control. In this work, a direct writing method was reported for the in-situ preparation of a high-resolution graphene nanostructure of controllable size (the minimum feature size is about 15 nm), which combines the advantages of e-beam lithography and copper-catalyzed growth. By using the Fourier infrared absorption test, we found that the hydrogen and oxygen elements were disappearing due to knock-on displacement and the radiolysis effect. The graphene crystal is also formed via diffusion and the local heating effect between the e-beam and copper substrate, based on the Raman spectra test. This simple process for the in-situ synthesis of graphene nanostructures has many promising potential applications, including offering a way to make nanoelectrodes, NEMS cantilever resonant structures, nanophotonic devices and so on.