The dynamics of magnetic vortex cores is of great interest because the gyrotropic mode has applications in spin torque driven magnetic microwave oscillators, and also provides a means to flip the direction of the core for use in magnetic storage devices. Here, we propose a new means of stimulating magnetization reversal of the vortex core by applying a time-varying strain gradient to planar structures of the magnetostrictive material (Galfenol), coupled to an underlying piezoelectric layer. Using micromagnetic simulations we have shown that the vortex core state can be deterministically reversed by electric field control of the time-dependent strain-induced anisotropy.
The magnetoelectric effect in M-type Ti-Co doped strontium hexaferrite has been studied using a combination of magnetometry and element specific soft X-ray spectroscopies. A large increase (>×30) in the magnetoelectric coefficient is found when Co2+ enters the trigonal bi-pyramidal site. The 5-fold trigonal bi-pyramidal site has been shown to provide an unusual mechanism for electric polarization based on the displacement of magnetic transition metal (TM) ions. For Co entering this site, an off-centre displacement of the cation may induce a large local electric dipole as well as providing an increased magnetostriction enhancing the magnetoelectric effect.
Indium tin oxide (ITO) has recently gained prominence as a photonic nanomaterial, for example, in modulators, tuneable metasurfaces and for epsilon-near-zero (ENZ) photonics. The optical properties of ITO are typically described by the Drude model and are strongly dependent on the deposition conditions. In the current literature, studies often make several assumptions to connect the optically measured material parameters to the electrical properties of ITO, which are not always clear, nor do they necessarily apply. Here, we present a comprehensive study of the structural, electrical, and optical properties of ITO and showed how they relate to the deposition conditions. We use guided mode resonances to determine the dispersion curves of the deposited material and relate these to structural and electrical measurements to extract all relevant material parameters. We demonstrate how the carrier density, mobility, plasma frequency, electron effective mass, and collision frequency vary as a function of deposition conditions, and that the high-frequency permittivity () can vary significantly from the value of = 3.9 that many papers simply assume to be a constant. The depth of analysis we demonstrate allows the findings to be easily extrapolated to the photonic characterisation of other transparent conducting oxides (TCOs), whilst providing a much-needed reference for the research area.
The spectroscopic g-factor of epitaxial thin film Yttrium Iron Garnet (YIG) has been studied using a combination of ferromagnetic resonance spectroscopy and x-ray magnetic circular dichroism. The values obtained by the two techniques are found, within experimental error, to be in agreement using Kittel's original derivation for the g-factor. For an insulating material with an entirely Fe3+ configuration, a spin mixing correction to Kittel's derivation of the spectroscopic g-factor, as recently shown by Shaw et al. [Phys. Rev. Lett. 127, 207201 (2021)] for metallic systems, is not required and demonstrates that the spin mixing parameter is small in YIG due to negligible spin–orbit coupling.
Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing.