A self-powered solar-blind photodetector with largeV_ocenhancing performance is constructed on the PEDOT:PSS/Ga₂O₃hybrid heterojunction.

The oxygen vacancies regulated via the lattice O atom formation/desorption process under oxidizing/reducing annealing reveal an effective modulating effect on the ε-Ga ₂ O ₃ photodetector performances.

A high-performance and easily fabricated Ni/β-Ga₂O₃ Schottky photodiode was developed for ultraviolet solar-blind detection.

A β-Ga₂O₃/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

Gallium oxide (Ga₂O₃) is a representative of ultra-wide bandgap semiconductors, with a band gap of about 4.9 eV. In addition to a large dielectric constant and excellent physical and chemical stability, Ga₂O₃ has a theoretical breakdown electric field strength of more than 8 MV cm⁻¹, which is 27 times more than that of Si and about twice as large as that of SiC and GaN. It is guaranteed that Ga₂O₃ has irreplaceable applications in ultra-high-power (1–10 kW) electronic devices. Unfortunately, due to the difficulty of p-type doping of Ga₂O₃, the full Ga₂O₃-based bipolar devices face more difficulties, and the unipolar Ga₂O₃ power Schottky diodes are feasible, but substantial progress has been made in recent years. In this article, we review the advanced progress and important achievements of the state-of-the-art Ga₂O₃-based power Schottky barrier diodes, and provide staged guidance for the further development of Ga₂O₃ power devices. Multiple types of device architectures, including basic structure, edge terminal processing, field-plated, trench and heterojunction p–n structure, will be discussed in detail.

A dual-mode, sensitive β-Ga₂O₃ MOS-structured photodiode is constructed to perform solar-blind detection, showing high-performances and operations at zero bias with a high external quantum efficiency of 16.37% and specific detectivity of 10¹¹ Jones.