Copper nitride (Cu₃N) has gained significant attention recently due to its potential in several scientific and technological applications. This study focuses on using Cu₃N as a solar absorber in photovoltaic technology. Cu₃N thin films were deposited on glass substrates and silicon wafers via radio-frequency magnetron sputtering at different nitrogen flow ratios with total pressures ranging from 1.0 to 5.0 Pa. The thin films’ structural, morphology, and chemical properties were determined using XRD, Raman, AFM, and SEM/EDS techniques. The results revealed that the Cu₃N films exhibited a polycrystalline structure, with the preferred orientation varying from 100 to 111 depending on the working pressure employed. Raman spectroscopy confirmed the presence of Cu-N bonds in characteristic peaks observed in the 618–627 cm⁻¹ range, while SEM and AFM images confirmed the presence of uniform and smooth surface morphologies. The optical properties of the films were investigated using UV-VIS-NIR spectroscopy and photothermal deflection spectroscopy (PDS). The obtained band gap, refractive index, and Urbach energy values demonstrated promising optical properties for Cu₃N films, indicating their potential as solar absorbers in photovoltaic technology. This study highlights the favourable properties of Cu₃N films deposited using the RF sputtering method, paving the way for their implementation in thin-film photovoltaic technologies. These findings contribute to the progress and optimisation of Cu₃N-based materials for efficient solar energy conversion.

This material can be considered to be an interesting eco-friendly choice to be used in the photovoltaic field. In this work, we present the fabrication of Cu₃N thin films by reactive radio-frequency (RF) magnetron sputtering at room temperature, using nitrogen as the process gas. Different RF power values ranged from 25 to 200 W and gas pressures of 3.5 and 5 Pa were tested to determine their impact on the film properties. The morphology and structure were exhaustively examined by Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR) and Raman Spectroscopies and X-ray Diffraction (XRD), respectively. The AFM micrographs revealed different morphologies depending on the total pressure used, and rougher surfaces when the films were deposited at the lowest pressure; whereas FTIR and Raman spectra exhibited the characteristics bands related to the Cu-N bonds of Cu₃N. Such bands became narrower as the RF power increased. XRD patterns showed the (100) plane as the preferred orientation, that changed to (111) with the RF power, revealing a worsening in structural quality. Finally, the band gap energy was estimated from transmission spectra carried out with a Perkin Elmer 1050 spectrophotometer to evaluate the suitability of Cu₃N as a light absorber. The values obtained demonstrated the capability of Cu₃N for solar energy conversion applications, indicating a better film performance under the sputtering conditions 5.0 Pa and RF power values ranged from 50 to 100 W.

Copper nitride (${\mathrm{Cu}}_3\mathrm{N}$), a metastable poly-crystalline semiconductor material with reasonably high stability at room temperature, is receiving much attention as a very promising next-generation, earth-abundant, thin film solar light absorber. Its non-toxicity, on the other hand, makes it a very attractive eco-friendly (greener from an environmental standpoint) semiconducting material. In the present investigation, ${\mathrm{Cu}}_3\mathrm{N}$ thin films were successfully grown by employing reactive radio-frequency magnetron sputtering at room temperature with an RF-power of 50 W, total working gas pressure of $0.5\mathrm{Pa}$, and partial nitrogen pressures of $0.8$ and $1.0$, respectively, onto glass substrates. We investigated how argon affected the optical properties of the thin films of Cu${}_3$N, with the aim of achieving a low-cost solar light absorber material with the essential characteristics that are needed to replace the more common silicon that is currently in present solar cells. Variable angle spectroscopic ellipsometry measurements were taken at three different angles, ${50}^{\circ }$, ${60}^{\circ }$, and ${70}^{\circ }$, to determine the two ellipsometric parameters psi, $\psi$, and delta, $\Delta$. The bulk planar ${\mathrm{Cu}}_3\mathrm{N}$ layer was characterized by a one-dimensional graded index model together with the combination of a Tauc–Lorentz oscillator, while a Bruggeman effective medium approximation model with a $50\%$ air void was adopted in order to account for the existing surface roughness layer. In addition, the optical properties, such as the energy band gap, refractive index, extinction coefficient, and absorption coefficient, were all accurately found to highlight the true potential of this particular material as a solar light absorber within a photovoltaic device. The direct and indirect band gap energies were precisely computed, and it was found that they fell within the useful energy ranges of $2.14$–$2.25$ eV and $1.45$–$1.71$ eV, respectively. The atomic structure, morphology, and chemical composition of the Cu${}_3$N thin films were analyzed using X-ray diffraction, atomic force microscopy, and energy-dispersive X-ray spectroscopy, respectively. The Cu${}_3$N thin layer thickness, profile texture, and surface topography of the ${\mathrm{Cu}}_3\mathrm{N}$ material were characterized using scanning electron microscopy.

Copper nitride, a metastable semiconductor material with high stability at room temperature, is attracting considerable attention as a potential next-generation earth-abundant thin-film solar absorber. Moreover, its non-toxicity makes it an interesting eco-friendly material. In this work, copper nitride films were fabricated using reactive radio frequency (RF) magnetron sputtering at room temperature, 50 W of RF power, and partial nitrogen pressures of 0.8 and 1.0 on glass and silicon substrates. The role of argon in both the microstructure and the optoelectronic properties of the films was investigated with the aim of achieving a low-cost absorber material with suitable properties to replace the conventional silicon in solar cells. The results showed a change in the preferential orientation from (100) to (111) planes when argon was introduced in the sputtering process. Additionally, no structural changes were observed in the films deposited in a pure nitrogen environment. Fourier transform infrared (FTIR) spectroscopy measurements confirmed the presence of Cu–N bonds, regardless of the gas environment used, and XPS indicated that the material was mainly N-rich. Finally, optical properties such as band gap energy and refractive index were assessed to establish the capability of this material as a solar absorber. The direct and indirect band gap energies were evaluated and found to be in the range of 1.70–1.90 eV and 1.05–1.65 eV, respectively, highlighting a slight blue shift when the films were deposited in the mixed gaseous environment as the total pressure increased.

Copper-nitride (Cu${}_3$N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu${}_3$N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu${}_3$N thin film layers were studied by UV-MIR (0.2–40 $\mathsf{\mu }$m) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu${}_3$N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, $E_{04}$, varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.

The pursuit of efficient, profitable, and ecofriendly materials has defined solar cell research from its inception to today. Some materials, such as copper nitride (Cu₃N), show great promise for promoting sustainable solar technologies. This study employed reactive radio-frequency magnetron sputtering using a pure nitrogen environment to fabricate quality Cu₃N thin films to evaluate how both temperature and gas working pressure affect their solar absorption capabilities. Several characterization techniques, including X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), Raman spectroscopy, scanning electron microscopy (SEM), nanoindentation, and photothermal deflection spectroscopy (PDS), were used to determine the main properties of the thin films. The results indicated that, at room temperature, it is possible to obtain a material that is close to stoichiometric Cu₃N material (Cu/N ratio ≈ 3) with (100) preferred orientation, which was lost as the substrate temperature increases, demonstrating a clear influence of this parameter on the film structure attributed to nitrogen re-emission at higher temperatures. Raman microscopy confirmed the formation of Cu-N bonds within the 628–637 cm⁻¹ range. In addition, the temperature and the working pressure significantly also influence the film hardness and the grain size, affecting the elastic modulus. Finally, the optical properties revealed suitable properties at lower temperatures, including bandgap values, refractive index, and Urbach energy. These findings underscore the potential of Cu₃N thin films in solar energy due to their advantageous properties and resilience against defects. This research paves the way for future advancements in efficient and sustainable solar technologies.