A controlled and reliable nanostructured metallic substrate is a prerequisite for developing effective surface-enhanced Raman scattering (SERS) spectroscopy techniques. In this study, we present a novel SERS platform fabricated using ultra-violet nanoimprint lithography (UV-NIL) to produce large-area, ordered nanostructured arrays. By using UV-NIL imprinted patterns in resist, we were able to overcome the main limitations present in most common SERS platforms, such as nonuniformity, nonreproducibility, low throughput, and high cost. We simulated and fabricated C-shaped plasmonic nanostructures that exhibit high signal enhancement at an excitation wavelength of 785 nm. The substrates were fabricated by directly coating the imprinted resist with a thin gold layer. Avoiding the need to etch patterns in silicon significantly reduces the time and cost of fabrication and facilitates reproducibility. The functionality of the substrates for SERS detection was validated by measuring the SERS spectra of Rhodamine 6G.

As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100 nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity. To demonstrate the quality of the structures, metasurface lenses, which demonstrate diffraction limited focusing and close to theoretical efficiency for NIR wavelengths λ ∈ (1.3 μm, 1.6 μm), are fabricated. We demonstrate a process which removes the characteristic sidewall surface roughness of the Bosch process, allowing for smooth 90-degree vertical sidewalls. We also demonstrate that the optical performance of the metasurface lenses is not affected adversely in the case of Bosch sidewall surface roughness with 45 nm indentations (or scallops). Next steps of development are defined for achieving full wafer coverage.

Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact, ultra-low-power phase modulator based on a silicon nitride (Si$_3$N$_4$) waveguide integrated with thin-film lead zirconate titanate (PZT) that actuates a bridge-type MEMS. The suspended actuator exploits PZT's strong piezoelectric effect to induce mechanically driven phase shifts, enabling efficient modulation in a Mach--Zehnder interferometer. For 3~mm and 5~mm modulators, phase shifts of $1.45π$ and $2.5π$ are achieved at 10~V, corresponding to a scalability metric ($V_π\cdot L$) of 2.25~V$\cdot$cm at 635~nm. This represents an order-of-magnitude improvement in scalability over stress-optic PZT modulators. The devices also exhibit ultralow power consumption ($\sim 12\,\mathrm{nW}$), $\sim 5\,\mathrm{ms}$ rise time, and optical loss $< 0.75\,\mathrm{dB/cm}$. Furthermore, we demonstrate on-chip beam shaping.

A conventional refractive lens surface can act as a positive (converging) or negative (diverging) lens, but the same surface cannot act as both. We show that a geometric phase metasurface lens can have the unique property of acting both as a positive or negative lens upon transmission through its front or rear side, respectively. This offers certain freedom in compound lens design, where one combines focusing and defocusing operations. We utilize this property to make an ultra-compact, varifocal reflective lens, where a metasurface is placed in front of a novel long-stroke piezoelectric MEMS-micromirror. A large theoretical diopter tunability of 6330 m$^{-1}$ is enabled due to innovative thin-film piezoelectric MEMS design, offering 62 $μ$m displacement at 40V and low power, along with rapid actuation in the kHz region. The achieved MEMS-displacement is an order of magnitude larger than previously reported out-of-plane mechanical metasurface actuation. Since both metasurface and micromirror are flat, the presented reflective lens can be assembled without need for a spacer. It is therefore well suited for wafer-level silicon fabrication at high volumes and low cost. A proof-of-concept implementation using a 1550nm NIR metalens is demonstrated, attaining on the order of 1121 m$^{-1}$ diopter change for a focal length shift of 270 $μ$m caused by a 53 $μ$m micromirror displacement.